A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/
Flexible β‐Ga 2 O 3 Nanomembrane Schottky Barrier Diodes
Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β‐Ga2O3nanomembranes (NMs). In order to realize flexible high power β‐Ga2O3SBDs, sub‐micron thick freestanding β‐Ga2O3NMs are created from a bulk β‐Ga2O3substrate and transfer‐printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β‐Ga2O3NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β‐Ga2O3SBDs exhibit the record high critical breakdown field strength (
- Award ID(s):
- 1809077
- PAR ID:
- 10462676
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Electronic Materials
- Volume:
- 5
- Issue:
- 3
- ISSN:
- 2199-160X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract In this paper, transient delayed rise and fall times for beta gallium oxide ( β -Ga 2 O 3 ) nanomembrane (NM) Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under different temperature conditions. The devices exhibited noticeably less-delayed turn on/turn off transient time when β -Ga 2 O 3 NM SBDs were built on a high thermal conductive (high- k ) substrate. Furthermore, a relationship between the β -Ga 2 O 3 NM thicknesses under different temperature conditions and their transient characteristics were systematically investigated and verified it using a multiphysics simulator. Overall, our results revealed the impact of various substrates with different thermal properties and different β -Ga 2 O 3 NM thicknesses on the performance of β -Ga 2 O 3 NM-based devices. Thus, the high- k substrate integration strategy will help design future β -Ga 2 O 3 -based devices by maximizing heat dissipation from the β -Ga 2 O 3 layer.more » « less
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A new record‐high room‐temperature electron Hall mobility (
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