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Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today’s wide band gap power electronics. However, the most critical challenge to the commercialization of Ga2O3 electronics is overheating, which impacts the device performance and reliability. We fabricated a Ga2O3/4H–SiC composite wafer using a fusion-bonding method. A low-temperature (≤600 °C) epitaxy and device processing scheme was developed to fabricate MOSFETs on the composite wafer. The low-temperature-grown epitaxial Ga2O3 devices deliver high thermal performance (56% reduction in channel temperature) and a power figure of merit of (∼300 MW/cm2), which is the highest among heterogeneously integrated Ga2O3 devices reported to date. Simulations calibrated based on thermal characterization results of the Ga2O3-on-SiC MOSFET reveal that a Ga2O3/diamond composite wafer with a reduced Ga2O3 thickness (∼1 μm) and a thinner bonding interlayer (<10 nm) can reduce the device thermal impedance to a level lower than that of today’s GaN-on-SiC power switches.
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CIRCULARLY POLARIZED THERMAL RADIATION IN α-MoO3/β-Ga2O3 TWISTED LAYERS
We numerically investigated the possibility to obtain circularly polarized infrared thermal emission from a bilayer scheme taking advantage of the strong anisotropy of low symmetry materials such as -Ga2O3 and -MoO3. Our results show that it is possible to achieve a high degree of circular polarization over 0.85 at two typical emission frequencies related to the excitation of -Ga2O3 optical phonons. Our simple but effective scheme could set the basis for a new class of lithography-free thermal sources for IR bio-sensing.
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- Award ID(s):
- 2029892
- PAR ID:
- 10463346
- Date Published:
- Journal Name:
- Proceedings of the 10th International Symposium on Radiative Transfer, RAD-23 Thessaloniki, Greece, 12–16 June 2023
- Page Range / eLocation ID:
- 145 to 151
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1615/RAD-23.180
