Qin, Yuan, Xiao, Ming, Zhang, Ruizhe, Xie, Qingyun, Palacios, Tomás, Wang, Boyan, Ma, Yunwei, Kravchenko, Ivan, Briggs, Dayrl P, Hensley, Dale K, Srijanto, Bernadeta R, and Zhang, Yuhao. 1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier. Retrieved from https://par.nsf.gov/biblio/10464206. IEEE Electron Device Letters 44.7 Web. doi:10.1109/LED.2023.3282025.

Qin, Yuan, Xiao, Ming, Zhang, Ruizhe, Xie, Qingyun, Palacios, Tomás, Wang, Boyan, Ma, Yunwei, Kravchenko, Ivan, Briggs, Dayrl P, Hensley, Dale K, Srijanto, Bernadeta R, & Zhang, Yuhao. 1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier. IEEE Electron Device Letters, 44 (7). Retrieved from https://par.nsf.gov/biblio/10464206. https://doi.org/10.1109/LED.2023.3282025

Qin, Yuan, Xiao, Ming, Zhang, Ruizhe, Xie, Qingyun, Palacios, Tomás, Wang, Boyan, Ma, Yunwei, Kravchenko, Ivan, Briggs, Dayrl P, Hensley, Dale K, Srijanto, Bernadeta R, and Zhang, Yuhao. "1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier". IEEE Electron Device Letters 44 (7). Country unknown/Code not available. https://doi.org/10.1109/LED.2023.3282025. https://par.nsf.gov/biblio/10464206.

@article{osti_10464206,
place = {Country unknown/Code not available}, title = {1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier}, url = {https://par.nsf.gov/biblio/10464206}, DOI = {10.1109/LED.2023.3282025}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {44}, number = {7}, author = {Qin, Yuan and Xiao, Ming and Zhang, Ruizhe and Xie, Qingyun and Palacios, Tomás and Wang, Boyan and Ma, Yunwei and Kravchenko, Ivan and Briggs, Dayrl P and Hensley, Dale K and Srijanto, Bernadeta R and Zhang, Yuhao}, }