Direct growth of MoS2 on electrolytic substrate and realization of high-mobility transistors
- Award ID(s):
- 1720595
- PAR ID:
- 10474719
- Publisher / Repository:
- APS Physics
- Date Published:
- Journal Name:
- Physical Review Materials
- Volume:
- 5
- Issue:
- 5
- ISSN:
- 2475-9953
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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