Zhang, Chendong, Li, Ming-Yang, Tersoff, Jerry, Han, Yimo, Su, Yushan, Li, Lain-Jong, Muller, David A., and Shih, Chih-Kang. Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions. Retrieved from https://par.nsf.gov/biblio/10476160. Nature Nanotechnology 13.2 Web. doi:10.1038/s41565-017-0022-x.

Zhang, Chendong, Li, Ming-Yang, Tersoff, Jerry, Han, Yimo, Su, Yushan, Li, Lain-Jong, Muller, David A., & Shih, Chih-Kang. Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions. Nature Nanotechnology, 13 (2). Retrieved from https://par.nsf.gov/biblio/10476160. https://doi.org/10.1038/s41565-017-0022-x

Zhang, Chendong, Li, Ming-Yang, Tersoff, Jerry, Han, Yimo, Su, Yushan, Li, Lain-Jong, Muller, David A., and Shih, Chih-Kang. "Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions". Nature Nanotechnology 13 (2). Country unknown/Code not available: Nature. https://doi.org/10.1038/s41565-017-0022-x. https://par.nsf.gov/biblio/10476160.

@article{osti_10476160,
place = {Country unknown/Code not available}, title = {Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions}, url = {https://par.nsf.gov/biblio/10476160}, DOI = {10.1038/s41565-017-0022-x}, abstractNote = {}, journal = {Nature Nanotechnology}, volume = {13}, number = {2}, publisher = {Nature}, author = {Zhang, Chendong and Li, Ming-Yang and Tersoff, Jerry and Han, Yimo and Su, Yushan and Li, Lain-Jong and Muller, David A. and Shih, Chih-Kang}, }