An official website of the United States government
We propose an electroacoustic transistor enabled by reconfigurable topological insulators (TIs). The underlying structure of the device is a hexagonal lattice with a unit cell consisting of piezoelectric disks bonded to an aluminum substrate. First, we study the dispersion of flexural waves in the reconfigurable TI to identify Dirac cones in the band structure of a unit cell possessing C6v-symmetry. A topological bandgap can be opened by breaking inversion symmetry in the unit cell. This is achieved by altering the elastic response of one of the affixed piezoelectric disks using a negative impedance shunt circuit. Next, we analyze various topological states formed by interfacing mirror-symmetric unit cells. Sublattices with interface states are then combined to construct a transistor supercell which hosts at least two topologically protected channels for wave propagation. The amplitude of an incoming acoustic signal propagating in one of the topological channels, referred to as the ‘Gate’, is used to switch on or off a second topological channel between a wave source and receiver, mimicking the behavior of a field effect transistor in electronics. We employ finite element analysis to study the harmonic response of the transistor structure demonstrating the OFF and ON states of the device. Further, we present a mock-up of an electrical circuit which enables the switching of the topological channel between a wave source and receiver. The design of the proposed wave-based transistor promises the advantage of topological protection and may find applications in wearable devices, edge computing, and sensing in harsh environments.
more »
« less
Numerical demonstration of a topologically-protected electroacoustic transistor
In this paper we conceptualize electroacoustic transistors based on topologically protected interface states in a reconfigurable valley-Hall topological insulator. Using piezoelectric media and active shunt circuits, we numerically model the spatial inversion symmetry breaking in a unit cell to produce topological bandgaps. These gaps are known to host robust modes for wave propagation along an interface. We use two such modes to design a transistor where the wave propagation in one topological channel switches on or off a second topological channel between a source and receiver elsewhere in the structure. Multiple such transistors may be combined to develop logic gates. Further, we develop and simulate the behavior of an electronic circuit which enables the transistor action. Our design opens a pathway to novel wave-based devices which may find applications in structure-based computing, as hybrid multiplexers in communication devices, and as structural switches or embedded sensors in robotics and internet of things.
more »
« less
- Award ID(s):
- 1929849
- PAR ID:
- 10477609
- Publisher / Repository:
- Frontiers in Acoustics
- Date Published:
- Journal Name:
- Frontiers in Acoustics
- Volume:
- 1
- ISSN:
- 2813-8082
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
We experimentally demonstrate a topologically protected electroacoustic transistor. We construct a reconfigurable phononic analog of the quantum valley-Hall insulator composed of electrically shunted piezoelectric disks bonded to a patterned plate forming a monolithic structure. The device can be dynamically reconfigured to host one or more topological interface states via breaking inversion symmetry through selective powering of shunt circuits. Above a threshold, the amplitude of wave energy at a chosen location in one topological interface creates a second interface by dynamically switching power between two groups of shunts using relays. This enables the flow of wave energy between two locations in the reconfigured interface analogous to the voltage-controlled electron flow in a field effect transistor. The amplitude of wave energy in the second interface is used for bit abstraction to implement acoustic logic. We illustrate the various states of the transistor and experimentally demonstrate wave-based switching. The proposed electroacoustic transistor is envisioned to find applications in wave-based devices and edge computing in extreme environments and inspire novel technologies leveraging acoustic logic.more » « less
-
Organic Electrochemical Transistors are versatile sensors that became essential for the field of organic bioelectronics. However, despite their importance, an incomplete understanding of their working mechanism is currently precluding a targeted design of Organic Electrochemical Transistors and it is still challenging to formulate precise design rules guiding materials development in this field. Here, it is argued that current capacitive device models neglect lateral ion currents in the transistor channel and therefore fail to describe the equilibrium state of Organic Electrochemical Transistors. An improved model is presented, which shows that lateral ion currents lead to an accumulation of ions at the drain contact, which significantly alters the transistor behavior. Overall, these results show that a better understanding of the interface between the organic semiconductor and the drain electrode is needed to reach a full understanding of Organic Electrochemical Transistors.more » « less
-
Abstract Organic electronics can be biocompatible and conformable, enhancing the ability to interface with tissue. However, the limitations of speed and integration have, thus far, necessitated reliance on silicon-based technologies for advanced processing, data transmission and device powering. Here we create a stand-alone, conformable, fully organic bioelectronic device capable of realizing these functions. This device, vertical internal ion-gated organic electrochemical transistor (vIGT), is based on a transistor architecture that incorporates a vertical channel and a miniaturized hydration access conduit to enable megahertz-signal-range operation within densely packed integrated arrays in the absence of crosstalk. These transistors demonstrated long-term stability in physiologic media, and were used to generate high-performance integrated circuits. We leveraged the high-speed and low-voltage operation of vertical internal ion-gated organic electrochemical transistors to develop alternating-current-powered conformable circuitry to acquire and wirelessly communicate signals. The resultant stand-alone device was implanted in freely moving rodents to acquire, process and transmit neurophysiologic brain signals. Such fully organic devices have the potential to expand the utility and accessibility of bioelectronics to a wide range of clinical and societal applications.more » « less
-
Abstract Topological field‐effect transistor is a revolutionary concept that physical fields are used to switch on and off quantum topological states of the condensed matter. Although this emerging concept has been explored in electronics, how to realize it in the acoustic realm remains elusive. In this work, a class of magnetoactive acoustic topological transistors capable of on‐demand switching on and off topological states and reconfiguring topological edges with external magnetic fields is presented. The key mechanism is to harness magnetic fields to tune air‐cavity volumes within acoustic chambers, thus breaking or preserving the inversion symmetry to manifest or conceal the quantum valley Hall effect. To switch the topological transport beyond the in‐plane routes, a magneto‐tuned non‐topological band gap to allow or forbid the wave transport out‐of‐plane is harnessed. With the reversible magnetic control, on‐demand switching of topological routes to realize topological field‐effect waveguides and wave regulators is demonstrated. Analogous to the impact of semiconductor transistors on modern electronics, this work may expand the scope of topological acoustics by achieving unprecedented functions in acoustic modulation.more » « less
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3389/facou.2023.1251215
