hBN-Layer-Promoted Heteroepitaxy in Reactively Sputter-Deposited MoS x≈2 (0001)/Al 2 O 3 (0001) Thin Films: Implications for Nanoelectronics
- PAR ID:
- 10479625
- Publisher / Repository:
- ACS
- Date Published:
- Journal Name:
- ACS Applied Nano Materials
- Volume:
- 6
- Issue:
- 4
- ISSN:
- 2574-0970
- Page Range / eLocation ID:
- 2908 to 2916
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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