The traditional von Neumann architecture limits the increase in computing efficiency and results in massive power consumption in modern computers due to the separation of storage and processing units. The novel neuromorphic computation system, an in-memory computing architecture with low power consumption, is aimed to break the bottleneck and meet the needs of the next generation of artificial intelligence (AI) systems. Thus, it is urgent to find a memory technology to implement the neuromorphic computing nanosystem. Nowadays, the silicon-based flash memory dominates non-volatile memory market, however, it is facing challenging issues to achieve the requirements of future data storage device development due to the drawbacks, such as scaling issue, relatively slow operation speed, and high voltage for program/erase operations. The emerging resistive random-access memory (RRAM) has prompted extensive research as its simple two-terminal structure, including top electrode (TE) layer, bottom electrode (BE) layer, and an intermediate resistive switching (RS) layer. It can utilize a temporary and reversible dielectric breakdown to cause the RS phenomenon between the high resistance state (HRS) and the low resistance state (LRS). RRAM is expected to outperform conventional memory device with the advantages, notably its low-voltage operation, short programming time, great cyclic stability, and good scalability. Among the materials for RS layer, indium gallium zinc oxide (IGZO) has shown attractive prospects in abundance and high atomic diffusion property of oxygen atoms, transparency. Additionally, its electrical properties can be easily modulated by controlling the stoichiometric ratio of indium and gallium as well as oxygen potential in the sputter gas. Moreover, since the IGZO can be applied to both the thin-film transistor (TFT) channel and RS layer, it has a great potential for fully integrated transparent electronics application. In this work, we proposed amorphous transparent IGZO-based RRAMs and investigated switching behaviors of the memory cells prepared with different top electrodes. First, ITO was choosing to serve as both TE and BE to achieve high transmittance. A multi-target magnetron sputtering system was employed to deposit all three layers (TE, RS, BE layers) on glass substrate. I-V characteristics were evaluated by a semiconductor parameter analyzer, and the bipolar RS feature of our RRAM devices was demonstrated by typical butterfly curves. The optical transmission analysis was carried out via a UV-Vis spectrometer and the average transmittance was around 80% out of entire devices in the visible-light wavelength range, implying high transparency. We adjusted the oxygen partial pressure during the sputtering of IGZO to optimize the property because the oxygen vacancy concentration governs the RS performance. Electrode selection is crucial and can impact the performance of the whole device. Thus, Cu TE was chosen for our second type of device because the diffusion of Cu ions can be beneficial for the formation of the conductive filament (CF). A ~5 nm SiO 2 barrier layer was employed between TE and RS layers to confine the diffusion of Cu into the RS layer. At the same time, this SiO 2 inserting layer can provide an additional interfacial series resistance in the device to lower the off current, consequently, improve the on/off ratio and whole performance. Finally, an oxygen affinity metal Ti was selected as the TE for our third type of device because the concentration of the oxygen atoms can be shifted towards the Ti electrode, which provides an oxygengettering activity near the Ti metal. This process may in turn lead to the formation of a sub-stoichiometric region in the neighboring oxide that is believed to be the origin of better performance. In conclusion, the transparent amorphous IGZO-based RRAMs were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of RRAMs, we integrated a set of TE materials, and a barrier layer on IGZO-based RRAM and compared the switch characteristics. Our encouraging results clearly demonstrate that IGZO is a promising material in RRAM applications and breaking the bottleneck of current memory technologies.
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Emerging Memory Devices Beyond Conventional Data Storage: Paving the Path for Energy-Efficient Brain-Inspired Computing
The current state of neuromorphic computing broadly encompasses domain-specific computing architectures designed to accelerate machine learning (ML) and artificial intelligence (AI) algorithms. As is well known, AI/ML algorithms are limited by memory bandwidth. Novel computing architectures are necessary to overcome this limitation. There are several options that are currently under investigation using both mature and emerging memory technologies. For example, mature memory technologies such as high-bandwidth memories (HBMs) are integrated with logic units on the same die to bring memory closer to the computing units. There are also research efforts where in-memory computing architectures have been implemented using DRAMs or flash memory technologies. However, DRAMs suffer from scaling limitations, while flash memory devices suffer from endurance issues. Additionally, in spite of this significant progress, the massive energy consumption needed in neuromorphic processors while meeting the required training and inferencing performance for AI/ML algorithms for future applications needs to be addressed. On the AI/ML algorithm side, there are several pending issues such as life-long learning, explainability, context-based decision making, multimodal association of data, adaptation to address personalized responses, and resiliency. These unresolved challenges in AI/ML have led researchers to explore brain-inspired computing architectures and paradigms.
more » « less- Award ID(s):
- 1926465
- NSF-PAR ID:
- 10484668
- Publisher / Repository:
- The Electrochemical Society Interface
- Date Published:
- Journal Name:
- The Electrochemical Society Interface
- Volume:
- 32
- Issue:
- 1
- ISSN:
- 1064-8208
- Page Range / eLocation ID:
- 49 to 51
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Memory technologies and applications implemented fully or partially using emerging 2D materials have attracted increasing interest in the research community in recent years. Their unique characteristics provide new possibilities for highly integrated circuits with superior performances and low power consumption, as well as special functionalities. Here, an overview of progress in 2D‐material‐based memory technologies and applications on the circuit level is presented. In the material growth and fabrication aspects, the advantages and disadvantages of various methods for producing large‐scale 2D memory devices are discussed. Reports on 2D‐material‐based integrated memory circuits, from conventional dynamic random‐access memory, static random‐access memory, and flash memory arrays, to emerging memristive crossbar structures, all the way to 3D monolithic stacking architecture, are systematically reviewed. Comparisons between experimental implementations and theoretical estimations for different integration architectures are given in terms of the critical parameters in 2D memory devices. Attempts to use 2D memory arrays for in‐memory computing applications, mostly on logic‐in‐memory and neuromorphic computing, are summarized here. Finally, challenges that impede the large‐scale applications of 2D‐material‐based memory are reviewed, and perspectives on possible approaches toward a more reliable system‐level fabrication are also given, hopefully shedding some light on future research.
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The major focus of artificial intelligence (AI) research is made on biomimetic synaptic processes that are mimicked by functional memory devices in the computer industry [1]. It is urgent to find a memory technology for suiting with Brain-Inspired Computing to break the von Neumann bottleneck which limits the efficiency of conventional computer architectures [2]. Silicon-based flash memory, which currently dominates the market for data storage devices, is facing challenging issues to meet the needs of future data storage device development due to the limitations, such as high-power consumption, high operation voltage, and low retention capacity [1]. The emerging resistive random-access memory (RRAM) has elicited intense research as its simple sandwiched structure, including top electrode (TE) layer, bottom electrode (BE) layer, and an intermediate resistive switching (RS) layer, can store data using RS phenomenon between the high resistance state (HRS) and the low resistance state (LRS). This class of emerging devices is expected to outperform conventional memory devices [3]. Specifically, the advantages of RRAM include low-voltage operation, short programming time, great cyclic stability, and good scalability [4]. Among the materials for RS layer, indium gallium zinc oxide (IGZO) has attracted attention because of its abundance and high atomic diffusion property of oxygen atoms, transparency, and its easily modulated electrical properties by controlling the stoichiometric ratio of indium and gallium as well as oxygen potential in the sputter gas [5, 6]. Moreover, since the IGZO can be applied to both the thin-film transistor (TFT) channel and RS layer, the IGZO-based fully integrated transparent electronics are very promising [5]. In this work, we proposed transparent IGZO-based RRAMs. First, we chose ITO to serve as both TE and BE to achieve high transmittance in the visible regime of light. All three layers (TE, RS, BE layers) were deposited using a multi-target magnetron sputtering system on glass substrates to demonstrate fully transparent oxide-based devices. I-V characteristics were evaluated by a semiconductor parameter analyzer, and our devices showed typical butterfly curves indicating the bipolar RS property. And the IGZO-based RRAM can survive more than 50 continuous sweeping cycles. The optical transmission analysis was carried out via an UV-Vis spectrometer and the average transmittance around 80% out of entire devices in the visible-light wavelength range, implying high transparency. To investigate the thickness dependence on the properties of RS layer, 50nm, 100nm and 150nm RS layer of IGZO RRAM were fabricated. Also, the oxygen partial pressure during the sputtering of IGZO was varied to optimize the property because the oxygen vacancy concentration governs the RS and RRAM performance. Electrode selection is crucial and can impact the performance of the whole device [7]. Thus, Cu TE was chosen for our second type of device because the diffusion of Cu ions can be beneficial for the formation the conductive filament (CF). Finally, a ~5 nm SiO2 barrier layer was employed between TE and RS layers to confine the diffusion of Cu into the RS layer. At the same time, this SiO2 inserting layer can provide an additional interfacial series resistance in the device to lower the off current, consequently, improve the on/off ratio and whole performance. In conclusion, the transparent IGZO-based RRAMs were established. To tune the property of RS layer, the thickness layer and sputtering conditions of RS were adjusted. In order to engineer the diffusion capability of the TE material to the RS layer and the BE, a set of TE materials and a barrier layer were integrated in IGZO-based RRAM and the performance was compared. Our encouraging results clearly demonstrate that IGZO is a promising material in RRAM applications and overcoming the bottleneck of current memory technologies.more » « less
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Obeid, Iyad ; Selesnick, Ivan ; Picone, Joseph (Ed.)Scalp electroencephalograms (EEGs) are the primary means by which phy-sicians diagnose brain-related illnesses such as epilepsy and seizures. Au-tomated seizure detection using clinical EEGs is a very difficult machine learning problem due to the low fidelity of a scalp EEG signal. Neverthe-less, despite the poor signal quality, clinicians can reliably diagnose ill-nesses from visual inspection of the signal waveform. Commercially avail-able automated seizure detection systems, however, suffer from unaccepta-bly high false alarm rates. Deep learning algorithms that require large amounts of training data have not previously been effective on this task due to the lack of big data resources necessary for building such models and the complexity of the signals involved. The evolution of big data science, most notably the release of the Temple University EEG (TUEG) Corpus, has mo-tivated renewed interest in this problem. In this chapter, we discuss the application of a variety of deep learning ar-chitectures to automated seizure detection. Architectures explored include multilayer perceptrons, convolutional neural networks (CNNs), long short-term memory networks (LSTMs), gated recurrent units and residual neural networks. We use the TUEG Corpus, supplemented with data from Duke University, to evaluate the performance of these hybrid deep structures. Since TUEG contains a significant amount of unlabeled data, we also dis-cuss unsupervised pre-training methods used prior to training these com-plex recurrent networks. Exploiting spatial and temporal context is critical for accurate disambigua-tion of seizures from artifacts. We explore how effectively several conven-tional architectures are able to model context and introduce a hybrid system that integrates CNNs and LSTMs. The primary error modalities observed by this state-of-the-art system were false alarms generated during brief delta range slowing patterns such as intermittent rhythmic delta activity. A varie-ty of these types of events have been observed during inter-ictal and post-ictal stages. Training models on such events with diverse morphologies has the potential to significantly reduce the remaining false alarms. This is one reason we are continuing our efforts to annotate a larger portion of TUEG. Increasing the data set size significantly allows us to leverage more ad-vanced machine learning methodologies.more » « less
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Abstract A neuromorphic computing system may be able to learn and perform a task on its own by interacting with its surroundings. Combining such a chip with complementary metal–oxide–semiconductor (CMOS)‐based processors can potentially solve a variety of problems being faced by today's artificial intelligence (AI) systems. Although various architectures purely based on CMOS are designed to maximize the computing efficiency of AI‐based applications, the most fundamental operations including matrix multiplication and convolution heavily rely on the CMOS‐based multiply–accumulate units which are ultimately limited by the von Neumann bottleneck. Fortunately, many emerging memory devices can naturally perform vector matrix multiplication directly utilizing Ohm's law and Kirchhoff's law when an array of such devices is employed in a cross‐bar architecture. With certain dynamics, these devices can also be used either as synapses or neurons in a neuromorphic computing system. This paper discusses various emerging nanoscale electronic devices that can potentially reshape the computing paradigm in the near future.
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1149/2.F10231IF
