Hou, Wenhui, Azizimanesh, Ahmad, Dey, Aditya, Yang, Yufeng, Wang, Wuxiucheng, Shao, Chen, Wu, Hui, Askari, Hesam, Singh, Sobhit, and Wu, Stephen M. Strain engineering of vertical molybdenum ditelluride phase-change memristors. Retrieved from https://par.nsf.gov/biblio/10487729. Nature Electronics . Web. doi:10.1038/s41928-023-01071-2.

Hou, Wenhui, Azizimanesh, Ahmad, Dey, Aditya, Yang, Yufeng, Wang, Wuxiucheng, Shao, Chen, Wu, Hui, Askari, Hesam, Singh, Sobhit, & Wu, Stephen M. Strain engineering of vertical molybdenum ditelluride phase-change memristors. Nature Electronics, (). Retrieved from https://par.nsf.gov/biblio/10487729. https://doi.org/10.1038/s41928-023-01071-2

Hou, Wenhui, Azizimanesh, Ahmad, Dey, Aditya, Yang, Yufeng, Wang, Wuxiucheng, Shao, Chen, Wu, Hui, Askari, Hesam, Singh, Sobhit, and Wu, Stephen M. "Strain engineering of vertical molybdenum ditelluride phase-change memristors". Nature Electronics (). Country unknown/Code not available: Nature Publishing Group. https://doi.org/10.1038/s41928-023-01071-2. https://par.nsf.gov/biblio/10487729.

@article{osti_10487729,
place = {Country unknown/Code not available}, title = {Strain engineering of vertical molybdenum ditelluride phase-change memristors}, url = {https://par.nsf.gov/biblio/10487729}, DOI = {10.1038/s41928-023-01071-2}, abstractNote = {}, journal = {Nature Electronics}, publisher = {Nature Publishing Group}, author = {Hou, Wenhui and Azizimanesh, Ahmad and Dey, Aditya and Yang, Yufeng and Wang, Wuxiucheng and Shao, Chen and Wu, Hui and Askari, Hesam and Singh, Sobhit and Wu, Stephen M.}, }