This content will become publicly available on May 28, 2024
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching
- NSF-PAR ID:
- 10487993
- Publisher / Repository:
- IEEE
- Date Published:
- Journal Name:
- 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
- Page Range / eLocation ID:
- 20 to 23
- Format(s):
- Medium: X
- Location:
- Hong Kong
- Sponsoring Org:
- National Science Foundation