More Like this

1. Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching

   https://doi.org/10.1109/LED.2022.3227091  

   Wang, Bixuan; Zhang, Ruizhe; Wang, Hengyu; He, Quanbo; Song, Qihao; Li, Qiang; Udrea, Florin; Zhang, Yuhao (February 2023, IEEE Electron Device Letters)
2. A Four-level Active Gate Driver with Continuously Adjustable Intermediate Gate Voltages

   https://doi.org/10.1109/APEC43599.2022.9773689  

   Du, X.; Wei, Y.; Stratta, A.; Du, L.; Machireddy, V.; Mantooth, H. (October 2022,  2022 IEEE Applied Power Electronics Conference and Exposition (APEC))
3. Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface

   https://doi.org/10.1109/APEC48139.2024.10509533  

   Wang, Bixuan; Song, Qihao; Mukherjee, Kalparupa; Efthymiou, Loizos; Popa, Daniel; Longobardi, Giorgia; Udrea, Florin; Zhang, Yuhao (February 2024, IEEE)
4. Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model

   https://doi.org/10.1109/ECCE55643.2024.10861003  

   Wang, Bixuan; Song, Qihao; Zhang, Yuhao (October 2024, IEEE)
5. Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model

   https://doi.org/10.1109/TPEL.2024.3443709  

   Wang, Bixuan; Song, Qihao; Zhang, Yuhao (December 2024, IEEE Transactions on Power Electronics)