skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Emergent layer stacking arrangements in c-axis confined MoTe2
Abstract The layer stacking order in 2D materials strongly affects functional properties and holds promise for next-generation electronic devices. In bulk, octahedral MoTe2possesses two stacking arrangements, the ferroelectric Weyl semimetal Tdphase and the higher-order topological insulator 1T′ phase. However, in thin flakes of MoTe2, it is unclear if the layer stacking follows the Td, 1T′, or an alternative stacking sequence. Here, we use atomic-resolution scanning transmission electron microscopy to directly visualize the MoTe2layer stacking. In thin flakes, we observe highly disordered stacking, with nanoscale 1T′ and Tddomains, as well as alternative stacking arrangements not found in the bulk. We attribute these findings to intrinsic confinement effects on the MoTe2stacking-dependent free energy. Our results are important for the understanding of exotic physics displayed in MoTe2flakes. More broadly, this work suggestsc-axis confinement as a method to influence layer stacking in other 2D materials.  more » « less
Award ID(s):
2039380 1719875
PAR ID:
10488987
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
SpringerNature
Date Published:
Journal Name:
Nature Communications
Volume:
14
Issue:
1
ISSN:
2041-1723
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Two-dimensional (2D) molybdenum ditelluride (MoTe 2 ) is an interesting material for fundamental study and applications, due to its ability to exist in different polymorphs of 2H, 1T, and 1T′, their phase change behavior, and unique electronic properties. Although much progress has been made in the growth of high-quality flakes and films of 2H and 1T′-MoTe 2 phases, phase-selective growth of all three phases remains a huge challenge, due to the lack of enough information on their growth mechanism. Herein, we present a novel approach to growing films and geometrical-shaped few-layer flakes of 2D 2H-, 1T-, and 1T′-MoTe 2 by atmospheric-pressure chemical vapor deposition (APCVD) and present a thorough understanding of the phase-selective growth mechanism by employing the concept of thermodynamics and chemical kinetics involved in the growth processes. Our approach involves optimization of growth parameters and understanding using thermodynamical software, HSC Chemistry. A lattice strain-mediated mechanism has been proposed to explain the phase selective growth of 2D MoTe 2 , and different chemical kinetics-guided strategies have been developed to grow MoTe 2 flakes and films. 
    more » « less
  2. Two-dimensional materials, such as transition metal dichalcogenides, have generated much interest due to their strain-sensitive electronic, optical, magnetic, superconducting, or topological properties. Harnessing control over their strain state may enable new technologies that operate by controlling these materials’ properties in devices such as straintronic transistors. Piezoelectric oxides have been proposed as one method to control such strain states on the device scale. However, there are few studies of how conformal 2D materials remain on oxide materials with respect to dynamic applications of the strain. Non-conformality may lead to non-optimal strain transfer. In this work, we explore this aspect of oxide-2D adhesion in the nanoscale switching of the substrate structural phase in thin 1T′-MoTe 2 attached to a mixed-phase thin-film BiFeO 3 (BFO), a multiferroic oxide with an electric-field induced structural phase transition that can generate mechanical strains of up to 2%. We observe that flake thickness impacts the conformality of 1T′-MoTe 2 to structural changes in BFO, but below four layers, 1T′-MoTe 2 fully conforms to the nanoscale BFO structural changes. The conformality of few-layer 1T′-MoTe 2 suggests that BFO is an excellent candidate for deterministic, nanoscale strain control for 2D materials. 
    more » « less
  3. Abstract Piezoelectricity in low‐dimensional materials and metal–semiconductor junctions has attracted recent attention. Herein, a 2D in‐plane metal–semiconductor junction made of multilayer 2H and 1T′ phases of molybdenum(IV) telluride (MoTe2) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H–1T′ junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials. 
    more » « less
  4. Abstract This work reports experimental demonstrations of reversible crystalline phase transition in ultrathin molybdenum ditelluride (MoTe2) controlled by thermal and mechanical mechanisms on the van der Waals (vdW) nanoelectromechanical systems (NEMS) platform, with hexagonal boron nitride encapsulated MoTe2structure residing on top of graphene layer. Benefiting from very efficient electrothermal heating and straining effects in the suspended vdW heterostructures, MoTe2phase transition is triggered by rising temperature and strain level. Raman spectroscopy monitors the MoTe2crystalline phase signatures in situ and clearly records reversible phase transitions between hexagonal 2H (semiconducting) and monoclinic 1T′ (metallic) phases. Combined with Raman thermometry, precisely measured nanomechanical resonances of the vdW devices enable the determination and monitoring of the strain variations as temperature is being regulated by electrothermal control. These results not only deepen the understanding of MoTe2phase transition, but also demonstrate a novel platform for engineering MoTe2phase transition and multiphysical devices. 
    more » « less
  5. Abstract In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T′ and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices. 
    more » « less