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Abstract This work explores the 2D interfacial energy transport between monolayer WSe2and SiO2while considering the thermal nonequilibrium between optical and acoustic phonons caused by photoexcitation. Recent modeling and experimental work have shown substantial temperature differences between optical and acoustic phonons (ΔTOA) in various nanostructures upon laser irradiation. Generally, characterizations of interfacial thermal resistance (R′′tc) at the nanoscale are difficult and depend on Raman‐probed temperature measurements, which only reveal optical phonon temperature information. Here it is shown that ΔTOAfor supported monolayer WSe2can be as high as 48% of the total temperature rise revealed by optothermal Raman methods—a significant proportion that can introduce sizeable error toR′′tcmeasurements if not properly considered. A frequency energy transport state‐resolved Raman technique (FET‐Raman) along with a 3D finite volume modeling of 2D material laser heating is used to extract the true interfacial thermal resistanceR′′tc(determined by acoustic phonon transport). Additionally, a novel ET‐Raman technique is developed to determine the energy coupling factorGbetween optical and acoustic phonons (on the order of 1015W m−3K−1). This work demonstrates the need for special consideration of thermal nonequilibriums during laser–matter interactions at the nanoscale.
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Perspectives on interfacial thermal resistance of 2D materials: Raman characterization and underlying physics
Abstract Interfacial thermal resistance plays a crucial role in efficient heat dissipation in modern electronic devices. It is critical to understand the interfacial thermal transport from both experiments and underlying physics. This review is focused on the transient opto-thermal Raman-based techniques for measuring the interfacial thermal resistance between 2D materials and substrate. This transient idea eliminates the use of laser absorption and absolute temperature rise data, therefore provides some of the highest level measurement accuracy and physics understanding. Physical concepts and perspectives are given for the time-domain differential Raman (TD-Raman), frequency-resolved Raman (FR-Raman), energy transport state-resolved Raman (ET-Raman), frequency domain ET-Raman (FET-Raman), as well as laser flash Raman and dual-wavelength laser flash Raman techniques. The thermal nonequilibrium between optical and acoustic phonons, as well as hot carrier diffusion must be considered for extremely small domain characterization of interfacial thermal resistance. To have a better understanding of phonon transport across material interfaces, we introduce a new concept termed effective interface energy transmission velocity. It is very striking that many reported interfaces have an almost constant energy transmission velocity over a wide temperature range. This physics consideration is inspired by the thermal reffusivity theory, which is effective for analyzing structure-phonon scattering. We expect the effective interface energy transmission velocity to give an intrinsic picture of the transmission of energy carriers, unaltered by the influence of their capacity to carry heat.
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- Award ID(s):
- 2032464
- PAR ID:
- 10490092
- Publisher / Repository:
- Springer Science + Business Media
- Date Published:
- Journal Name:
- Surface Science and Technology
- Volume:
- 2
- Issue:
- 1
- ISSN:
- 2731-7838
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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