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Title: Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate
Abstract

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlOx. Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

 
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NSF-PAR ID:
10494653
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Materials for Quantum Technology
Volume:
4
Issue:
1
ISSN:
2633-4356
Format(s):
Medium: X Size: Article No. 015101
Size(s):
["Article No. 015101"]
Sponsoring Org:
National Science Foundation
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