This content will become publicly available on December 12, 2024
Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
- Award ID(s):
- 2145340
- NSF-PAR ID:
- 10495573
- Publisher / Repository:
- IEEE Xplore
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 71
- Issue:
- 3
- ISSN:
- 0018-9383
- Page Range / eLocation ID:
- 1494 to 1501
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
No document suggestions found