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Title: Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
Award ID(s):
2145340
NSF-PAR ID:
10495573
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
IEEE Xplore
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
71
Issue:
3
ISSN:
0018-9383
Page Range / eLocation ID:
1494 to 1501
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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