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   https://doi.org/10.1038/s41377-020-0338-4  

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3. Programmable quantum emitter formation in silicon

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   Jhuria, K; Ivanov, V; Polley, D; Zhiyenbayev, Y; Liu, W; Persaud, A; Redjem, W; Qarony, W; Parajuli, P; Ji, Q; et al (May 2024, Nature Communications)

   Abstract Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N₂/H₂) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C_icenters while passivating the more common G-centers. The C_icenter is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C_icenter brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters. 

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