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Ultra-high purity elemental sources have long been considered a prerequisite for obtaining low impurity concentrations in compound semiconductors in the world of molecular beam epitaxy (MBE) since its inception in 1968. However, we demonstrate that a “dirty” solid precursor, ruthenium(III) acetylacetonate [also known as Ru(acac)3], can yield single-phase, epitaxial, and superconducting Sr2RuO4 films with the same ease and control as III–V MBE. A superconducting transition was observed at ∼0.9 K, suggesting a low defect density and a high degree of crystallinity in these films. In contrast to the conventional MBE, which employs the ultra-pure Ru metal evaporated at ∼2000 °C as a Ru source, along with reactive ozone to obtain Ru → Ru4+ oxidation, the use of the Ru(acac)3 precursor significantly simplifies the MBE process by lowering the temperature for Ru sublimation (less than 200 °C) and by eliminating the need for ozone. Combining these results with the recent developments in hybrid MBE, we argue that leveraging the precursor chemistry will be necessary to realize next-generation breakthroughs in the synthesis of atomically precise quantum materials.
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Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy
Molecular beam epitaxy (MBE), a workhorse of the semiconductor industry, has progressed rapidly in the last few decades in the development of novel materials. Recent developments in condensed matter and materials physics have seen the rise of many novel quantum materials that require ultra-clean and high-quality samples for fundamental studies and applications. Novel oxide-based quantum materials synthesized using MBE have advanced the development of the field and materials. In this review, we discuss the recent progress in new MBE techniques that have enabled synthesis of complex oxides that exhibit ‘quantum’ phenomena, including superconductivity and topological electronic states. We show how these techniques have produced breakthroughs in the synthesis of 4d and 5d oxide films and heterostructures that are of particular interest as quantum materials. These new techniques in MBE offer a bright future for the synthesis of ultra-high quality oxide quantum materials.
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- Award ID(s):
- 2045993
- PAR ID:
- 10496921
- Publisher / Repository:
- Institute of Physics
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 57
- Issue:
- 19
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- 193001
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1088/1361-6463/ad2569
