skip to main content

Attention:

The NSF Public Access Repository (NSF-PAR) system and access will be unavailable from 5:00 PM ET until 11:00 PM ET on Friday, June 21 due to maintenance. We apologize for the inconvenience.


This content will become publicly available on December 27, 2024

Title: Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating
Award ID(s):
2039351
NSF-PAR ID:
10504483
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
ACS Publications
Date Published:
Journal Name:
Nano Letters
Volume:
23
Issue:
24
ISSN:
1530-6984
Page Range / eLocation ID:
11866 to 11873
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Spontaneous Ge6O8cluster formation under ambient conditions using dispersion enhanced aryloxo ligands.

     
    more » « less