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Title: Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices
Award ID(s):
2039351 1539916
PAR ID:
10504490
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
ACS Publications
Date Published:
Journal Name:
ACS Applied Nano Materials
Volume:
6
Issue:
16
ISSN:
2574-0970
Page Range / eLocation ID:
15029 to 15037
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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