skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Explore Research Products in the PAR
It may take a few hours for recently added research products to appear in PAR search results.


Title: Near 100% external quantum efficiency 1550-nm broad spectrum photodetector
We report InGaAs/InP based p-i-n photodiodes with an external quantum efficiency (EQE) above 98% from 1510 nm to 1575 nm. For surface normal photodiodes with a diameter of 80 µm, the measured 3-dB bandwidth is 3 GHz. The saturation current is 30.5 mA, with an RF output power of 9.3 dBm at a bias of −17 V at 3 GHz.  more » « less
Award ID(s):
1842641
PAR ID:
10504602
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
Optica
Date Published:
Journal Name:
Optics Express
Volume:
30
Issue:
2
ISSN:
1094-4087
Page Range / eLocation ID:
3047
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. ; ; ; (, Optica Publishing Group)
    We demonstrate InGaAs/InAlGaAs/InP waveguide photodiodes on Si3N4with up to 81 GHz 3-dB bandwidth, 0.76 A/W responsivity, and -1.8 dBm and -9 dBm output RF power at 50 GHz and 100 GHz, respectively. 
    more » « less
  2. ; ; ; ; ; ; ; ; (, 2023 Optical Fiber Communications Conference and Exhibition (OFC))
    We demonstrate InGaAs/InP balanced photodiodes onSi3N4waveguides with record-high 3-dB bandwidth of 30 GHz, 0.72 A/W responsivity, and high common mode rejection ratio (CMRR) of 26 dB at 30 GHz. 
    more » « less
  3. ; ; ; ; ; ; ; (, Advanced Electronic Materials)
    Abstract Infrared photodiodes based on organic semiconductors are promising for low‐cost sensors that operate at room temperature. However, their realization remains hampered by poor device efficiency. Here, performance limitations are analyzed by evaluating the mobility‐lifetime products and charge collection efficiency of devices operating in the shortwave infrared with a peak absorption at 1550 nm. Through complementary impedance and current‐voltage measurements on devices with different donor‐to‐acceptor semiconductor ratios, a trade‐off between mobility and recombination time and the need to balance between transport and interfacial charge transfer are observed. Thus, this study revisits the mobility‐lifetime metric to shed new light on charge collection constraints in organic infrared photodiodes. 
    more » « less
  4. ; ; ; ; ; (, IEEE)
    This paper demonstrates the monolithic integration of a substrate-integrated waveguide bandpass filter (BPF) and a low-noise amplifier (LNA) at F-band, fabricated in a 70-nm GaN-on-SiC technology. The three-stage LNA alone achieves a state-of-the-art average noise figure of 3.6 dB over 87–115 GHz. The LNA + BPF exhibits a peak gain of 13.6 dB over a 3 dB bandwidth of 17 GHz from 104 to 121 GHz. The average noise figure is 4.9 dB over 87–115 GHz. The OP1 dB and saturated output power are 17.6dBm and >20 dBm, respectively. 
    more » « less
  5. ; ; ; ; ; ; ; ; (, Optica Publishing Group)
    We report an electrically pumped hybrid lithium niobate/III-V actively mode-locked laser. The laser emits 4.8 ps pulses at 10.17 GHz around 1065 nm with high peak power of∼1 W. 
    more » « less
  • Citation Formats
  • MLA
  • APA
  • Chicago
  • BibTeX
  • Text Encoded Conversion
  • XML
  • Save / Share this Record
  • Send to Email