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(, 2022 47th International Conference of Infrared, Millimeter and Terahertz Waves)
Zhang, Yue, Zhao, He Lin, Huang, Siyuan, Hossain, M. Abir, and van der Zande, Arend M. Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain. Retrieved from https://par.nsf.gov/biblio/10505939. ACS Nano . Web. doi:10.1021/acsnano.4c01457.
Zhang, Yue, Zhao, He Lin, Huang, Siyuan, Hossain, M. Abir, & van der Zande, Arend M. Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain. ACS Nano, (). Retrieved from https://par.nsf.gov/biblio/10505939. https://doi.org/10.1021/acsnano.4c01457
Zhang, Yue, Zhao, He Lin, Huang, Siyuan, Hossain, M. Abir, and van der Zande, Arend M.
"Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain". ACS Nano (). Country unknown/Code not available: American Chemical Society. https://doi.org/10.1021/acsnano.4c01457.https://par.nsf.gov/biblio/10505939.
@article{osti_10505939,
place = {Country unknown/Code not available},
title = {Enhancing Carrier Mobility in Monolayer MoS 2 Transistors with Process-Induced Strain},
url = {https://par.nsf.gov/biblio/10505939},
DOI = {10.1021/acsnano.4c01457},
abstractNote = {},
journal = {ACS Nano},
publisher = {American Chemical Society},
author = {Zhang, Yue and Zhao, He Lin and Huang, Siyuan and Hossain, M. Abir and van der Zande, Arend M.},
}
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