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Modeling the Effect of Gate-Drain Parasitic Capacitance of a SiC MOSFET in a Half-Bridge During the Soft Turn-Off and Hard Turn-On Transition
- Award ID(s):
- 2205934
- PAR ID:
- 10506593
- Publisher / Repository:
- IEEE
- Date Published:
- ISBN:
- 979-8-3503-1664-3
- Page Range / eLocation ID:
- 2419 to 2424
- Format(s):
- Medium: X
- Location:
- Long Beach, CA, USA
- Sponsoring Org:
- National Science Foundation
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