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Modeling the Effect of Gate-Drain Parasitic Capacitance of a SiC MOSFET in a Half-Bridge During the Soft Turn-Off and Hard Turn-On Transition
- Award ID(s):
- 2205934
- PAR ID:
- 10506593
- Publisher / Repository:
- IEEE
- Date Published:
- ISBN:
- 979-8-3503-1664-3
- Page Range / eLocation ID:
- 2419 to 2424
- Format(s):
- Medium: X
- Location:
- Long Beach, CA, USA
- Sponsoring Org:
- National Science Foundation
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null (Ed.)A bstract There are well-known criteria on the potential and field-space geometry for determining if slow-roll, slow-turn, multi-field inflation is possible. However, even though it has been a topic of much recent interest, slow-roll, rapid-turn inflation only has such criteria in the restriction to two fields. In this work, we generalize the two-field, rapid-turn inflationary attractor to an arbitrary number of fields. We quantify a limit, which we dub extreme turning , in which rapid-turn solutions may be found efficiently and develop methods to do so. In particular, simple results arise when the covariant Hessian of the potential has an eigenvector in close alignment with the gradient — a situation we find to be common and we prove generic in two-field hyperbolic geometries. We verify our methods on several known rapid-turn models and search two type-IIA constructions for rapid-turn trajectories. For the first time, we are able to efficiently search for these solutions and even exclude slow-roll, rapid-turn inflation from one potential.more » « less
