AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 mΩ cm2), high current density (>5 kA cm−2), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al0.75Ga0.25N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 104.
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AI-designed RF pulses enable fast pulsing heteronuclear multiple quantum coherence NMR experiment at high and ultra-high magnetic fields
An artificial intelligence optimized NMR sequence enables to perform rapid heteronuclear 2D spectroscopy at ultra-high magnetic fields.
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- Award ID(s):
- 2304829
- PAR ID:
- 10507144
- Editor(s):
- Professor Tian Yang
- Publisher / Repository:
- Royal Society of Chemistry
- Date Published:
- Journal Name:
- Chemical Communications
- Volume:
- 60
- Issue:
- 16
- ISSN:
- 1359-7345
- Page Range / eLocation ID:
- 2240 to 2243
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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