Najafi, Deniz, Morsali, Mehrdad, Zhou, Ranyang, Roohi, Arman, Marshall, Andrew, Misra, Durga, and Angizi, Shaahin. Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design. Retrieved from https://par.nsf.gov/biblio/10507517. IEEE Transactions on Electron Devices 71.4 Web. doi:10.1109/TED.2024.3366172.

Najafi, Deniz, Morsali, Mehrdad, Zhou, Ranyang, Roohi, Arman, Marshall, Andrew, Misra, Durga, & Angizi, Shaahin. Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design. IEEE Transactions on Electron Devices, 71 (4). Retrieved from https://par.nsf.gov/biblio/10507517. https://doi.org/10.1109/TED.2024.3366172

Najafi, Deniz, Morsali, Mehrdad, Zhou, Ranyang, Roohi, Arman, Marshall, Andrew, Misra, Durga, and Angizi, Shaahin. "Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design". IEEE Transactions on Electron Devices 71 (4). Country unknown/Code not available: IEEE. https://doi.org/10.1109/TED.2024.3366172. https://par.nsf.gov/biblio/10507517.

@article{osti_10507517,
place = {Country unknown/Code not available}, title = {Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design}, url = {https://par.nsf.gov/biblio/10507517}, DOI = {10.1109/TED.2024.3366172}, abstractNote = {}, journal = {IEEE Transactions on Electron Devices}, volume = {71}, number = {4}, publisher = {IEEE}, author = {Najafi, Deniz and Morsali, Mehrdad and Zhou, Ranyang and Roohi, Arman and Marshall, Andrew and Misra, Durga and Angizi, Shaahin}, }