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Title: Advancements in Modeling the Space Charge Induced Flexoelectric Effect
Flexoelectricity offers an energy harvesting alternative to piezoelectric materials. Although flexoelectricity is generally weak in most materials, recent findings show that bending a semiconductor with insulating barrier layers could induce a significantly enhanced flexoelectric response. We call this effect the Space Charge Induced Flexoelectric (SCIF) effect. This study explores the induced polarization resulting from free charge redistribution in a doped silicon beam. To understand the underlying physics, a 3D numerical model combining flexoelectric principles and the drift-diffusion theory of semiconduction was developed. The effective flexoelectric coefficient was computed by comparing the differential charge accumulation at the top and bottom of the beam and compared that with the experimental observations.  more » « less
Award ID(s):
2247453
PAR ID:
10512341
Author(s) / Creator(s):
; ; ;
Publisher / Repository:
IEEE
Date Published:
Journal Name:
2023 IEEE 22nd International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS)
ISBN:
979-8-3503-4421-9
Page Range / eLocation ID:
60 to 63
Format(s):
Medium: X
Location:
Abu Dhabi, United Arab Emirates
Sponsoring Org:
National Science Foundation
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