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Title: Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials
Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization field, however, formed by surface charges can suppress the out-of-plane polarization in ultrathin ferroelectric films that could otherwise exhibit lower coercive fields and operate with lower power. Here, we unveil stabilization of a polar longitudinal optical (LO) mode in the n=2 Ruddlesden–Popper family that produces out-of-plane ferroelectricity, persists under open-circuit boundary conditions, and is distinct from hyperferroelectricity. Our first-principles calculations show the stabilization of the LO mode is ubiquitous in chalcogenides and halides and relies on anharmonic trilinear mode coupling. We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.  more » « less
Award ID(s):
2104397
PAR ID:
10513808
Author(s) / Creator(s):
; ; ; ; ; ; ;
Publisher / Repository:
American Association for the Advancement of Science
Date Published:
Journal Name:
Science Advances
Volume:
9
Issue:
47
ISSN:
2375-2548
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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