skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Towards understanding the electronic structure of the simpler members of two-dimensional halide-perovskites
In this paper, we analyze the band structure of two-dimensional (2D) halide perovskites by considering structures related to the simpler case of the series, (BA)2⁢PbI4, in which PbI4 layers are intercalated with butylammonium [BA=CH3(CH2)3⁢NH3] organic ligands. We use density-functional-theory (DFT) based calculations and tight-binding (TB) models aiming to discover a simple description of the bands within 1 eV below the valence-band maximum and 2 eV above the conduction-band minimum, which, including the energy gap, is about a Δ⁢𝐸=5 eV energy range. The bands in this Δ⁢𝐸 range are those expected to contribute to the transport phenomena, photoconductivity, and light emission in the visible spectrum, at room and low temperature. We find that the atomic orbitals of the butylammonium chains have negligible contribution to the Bloch states which form the conduction and valence bands in the above defined Δ⁢𝐸 range. Our calculations reveal a rather universal, i.e., independent of the intercalating BA, rigid-band picture inside the above Δ⁢𝐸 range characteristic of the layered perovskite “matrix” (i.e., PbI4 in our example). Besides demonstrating the above conclusion, the main goal of this paper is to find accurate TB models which capture the essential features of the DFT bands in this Δ⁢𝐸 range. First, we ignore electron hopping along the 𝑐 axis and the octahedral distortions and this increased symmetry (from C2 to C4) halves the Bravais lattice unit cell size and the Brillouin zone unfolds to a 45∘ rotated square and this allows some analytical handling of the 2D TB Hamiltonian. The Pb 6⁢𝑠 and I 5⁢𝑠 orbitals are far away from the above Δ⁢𝐸 range and, thus, we integrate them out to obtain an effective model which only includes hybridized Pb 6⁢𝑝 and I 5⁢𝑝 states. Our TB-based treatment (a) provides a good quantitative description of the DFT band structure, (b) helps us conceptualize the complex electronic structure in the family of these materials in a simple way, and (c) yields the one-body part to be combined with appropriately screened electron interaction to describe many-body effects, such as excitonic bound states.  more » « less
Award ID(s):
2110814
PAR ID:
10519626
Author(s) / Creator(s):
Publisher / Repository:
American Physical Society
Date Published:
Journal Name:
Physical Review B
Volume:
108
Issue:
4
ISSN:
2469-9950
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Four quaternary hybrid halide perovskites have been synthesized in hydrohalic acid solutions under hydrothermal conditions. The structures of (CH3NH3)2AgRhX6 and (CH3NH3)2NaRhX6, (X = Cl–, Br–) consist of infinite one-dimensional chains of face-sharing metal-halide octahedra. The structure is closely related to the 2H hexagonal perovskite structure, but the space group symmetry is lowered from hexagonal P63/mmc to trigonal P3 ̅m1 by site ordering of the Rh3+ and Ag+/Na+ cations. All compositions demonstrate broad-spectrum visible light absorption with optical transitions arising from rhodium d-to-d transitions and halide-to-rhodium charge transfer transitions. The bromides show a 0.2 eV red shift in the optical transitions compared to the analogous chlorides. Crystal field splitting energies were found to be 2.6 eV and 2.4 eV for the chloride and bromide compositions, respectively. Band structure calculations for all compositions give rather flat valence and conduction bands, suggesting a zero-dimensional electronic structure. The valence bands are made up of crystal orbitals that are almost exclusively Rh 4d–Cl 3p (Br 4p) π* in character, while the conduction bands have Rh 4d–Cl 3p (Br 4p) σ* character. 
    more » « less
  2. Most cubic semiconductors have threefold degenerate p-bonding valence bands and nondegenerate s-antibonding conduction bands. This allows strong interband transitions from the valence to the conduction bands. On the other hand, intervalence band transitions within p-bonding orbitals in conventional p-type semiconductors are forbidden at k=0 and, therefore, weak, but observable. In gapless semiconductors, however, the s-antibonding band moves down between the split-off hole band and the valence band maximum due to the Darwin shift. This band arrangement makes them three-dimensional topological insulators. It also allows strong interband transitions from the s-antibonding valence band to the p-bonding bands, which have been observed in α-tin with Fourier-transform infrared spectroscopic ellipsometry [Carrasco et al., Appl. Phys. Lett. 113, 232104 (2018)]. This manuscript presents a theoretical description of such transitions applicable to many gapless semiconductors. This model is based on k→⋅p→ theory, degenerate carrier statistics, the excitonic Sommerfeld enhancement, and screening of the transitions by many-body effects. The impact of nonparabolic bands is approximated within Kane’s 8×8k→⋅p→-model by adjustments of the effective masses. This achieves agreement with experiments. 
    more » « less
  3. Abstract The perovskite (BA)4[CuII(CuIInIII)0.5]Cl8(1BA; BA+=butylammonium) allows us to study the high‐pressure structural, optical, and transport properties of a mixed‐valence 2D perovskite. Compressing1BAreduces the onset energy of CuI/IIintervalence charge transfer from 1.2 eV at ambient pressure to 0.2 eV at 21 GPa. The electronic conductivity of1BAincreases by 4 orders of magnitude upon compression to 20 GPa, when the activation energy for conduction decreases to 0.16 eV. In contrast, CuIIperovskites achieve similar conductivity at ≈50 GPa. The solution‐state synthesis of these perovskites is complicated, with more undesirable side products likely from the precursor mixtures containing three different metal ions. To circumvent this problem, we demonstrate an efficient mechanochemical synthesis to expand this family of halide perovskites with complex composition by simply pulverizing together powders of 2D CuIIsingle perovskites and CuIInIIIdouble perovskites. 
    more » « less
  4. Subchalcogenides are uncommon, and their chemical bonding results from an interplay between metal–metal and metal–chalcogenide interactions. Herein, we present Ir 6 In 32 S 21 , a novel semiconducting subchalcogenide compound that crystallizes in a new structure type in the polar P 31 m space group, with unit cell parameters a = 13.9378(12) Å, c = 8.2316(8) Å, α = β = 90°, γ = 120°. The compound has a large band gap of 1.48(2) eV, and photoemission and Kelvin probe measurements corroborate this semiconducting behavior with a valence band maximum (VBM) of −4.95(5) eV, conduction band minimum of −3.47(5) eV, and a photoresponse shift of the Fermi level by ∼0.2 eV in the presence of white light. X-ray absorption spectroscopy shows absorption edges for In and Ir do not indicate clear oxidation states, suggesting that the numerous coordination environments of Ir 6 In 32 S 21 make such assignments ambiguous. Electronic structure calculations confirm the semiconducting character with a nearly direct band gap, and electron localization function (ELF) analysis suggests that the origin of the gap is the result of electron transfer from the In atoms to the S 3p and Ir 5d orbitals. DFT calculations indicate that the average hole effective masses near the VBM (1.19 m e ) are substantially smaller than the average electron masses near the CBM (2.51 m e ), an unusual feature for most semiconductors. The crystal and electronic structure of Ir 6 In 32 S 21 , along with spectroscopic data, suggest that it is neither a true intermetallic nor a classical semiconductor, but somewhere in between those two extremes. 
    more » « less
  5. Photoluminescence studies reveal three CN-related luminescence bands in GaN doped with carbon: the YL1 band at 2.17 eV caused by electron transitions via the −/0 level of the CN, the BLC band at 2.85 eV due to transitions via the 0/+ level of the CN and the BL2 band at 3.0 eV attributed to the CNHi complex. The BLC band studied here has the zero-phonon line at 3.17 eV and a phonon-related fine structure at low temperatures. The 0/+ level of the CN is found at 0.33 ± 0.01 eV above the valence band, in agreement with recent theoretical predictions. These results will help to choose an optimal correction scheme in hybrid functional calculations. 
    more » « less