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1. Large magnetic anisotropy of a decorated spin-chain system K 2 Co 3 (MoO 4 ) 3 (OH) 2

   https://doi.org/10.1039/D4DT00203B  

   Patel, Bhakti K ; Ye, Feng ; Liyanage, W_L_N C ; Buchanan, C Charlotte ; Gilbert, Dustin A ; Kolis, Joseph W ; Sanjeewa, Liurukara D ( April 2024 , Dalton Transactions)

   The paper presents the hydrothermal synthesis, magnetic properties, and magnetic structure characterization of K₂Co₃(MoO₄)₃(OH)₂half sawtooth chains.

    

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2. Ni 2 P‐Modified Ta 3 N 5 and TaON for Photocatalytic Nitrate Reduction

   https://doi.org/10.1002/cnma.202000174  

   Wei, Lin ; Adamson, Marquix A. S. ; Vela, Javier ( May 2020 , ChemNanoMat)

   Self‐sustaining photocatalytic NO₃⁻reduction systems could become ideal NO₃⁻removal methods. Developing an efficient, highly active photocatalyst is the key to the photocatalytic reduction of NO₃⁻. In this work, we present the synthesis of Ni₂P‐modified Ta₃N₅(Ni₂P/Ta₃N₅), TaON (Ni₂P/TaON), and TiO₂(Ni₂P/TiO₂). Starting with a 2 mM (28 g/mL NO₃⁻−N) aqueous solution of NO₃⁻, as made Ni₂P/Ta₃N₅and Ni₂P/TaON display as high as 79% and 61% NO₃⁻conversion under 419 nm light within 12 h, which correspond to reaction rates per gram of 196 μmol g⁻¹ h⁻¹and 153 μmol g⁻¹ h⁻¹, respectively, and apparent quantum yields of 3–4%. Compared to 24% NO₃⁻conversion in Ni₂P/TiO₂, Ni₂P/Ta₃N₅and Ni₂P/TaON exhibit higher activities due to the visible light active semiconductor (SC) substrates Ta₃N₅and TaON. We also discuss two possible electron migration pathways in Ni₂P/semiconductor heterostructures. Our experimental results suggest one dominant electron migration pathway in these materials, namely: Photo‐generated electrons migrate from the semiconductor to co‐catalyst Ni₂P, and upshift its Fermi level. The higher Fermi level provides greater driving force and allows NO₃⁻reduction to occur on the Ni₂P surface.

    

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3. Pb 2 Ga 3 F 6 (SeO 3 ) 2 X 3 ·2H 2 O (X = Cl, Br): two new HTO-type members exhibiting large NLO effects mediated by ionic mixing and substitution strategies

   https://doi.org/10.1039/D4TC00554F  

   Liu, Lili ; Wang, Junbo ; Xiao, Bingchen ; Li, Xunchi ; Chu, Yaoqing ; Sun, Tongqing ; Halasyamani, P Shiv ( April 2024 , Journal of Materials Chemistry C)

   Pb₂Ga₃F₆(SeO₃)₂X₃·2H₂O achieve a better balance between the large SHG effect and wide band gap in the current HTO family.

    

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4. Crystal and Electronic Structure and Optical Properties of AE 2 SiP 4 ( AE = Sr, Eu, Ba) and Ba 4 Si 3 P 8

   https://doi.org/10.1002/zaac.201800430  

   Mark, Justin ; Dolyniuk, Juli‐Anna ; Tran, Nhon ; Kovnir, Kirill ( November 2018 , Zeitschrift für anorganische und allgemeine Chemie)

   Three new compounds in theAE‐Si‐P (AE= Sr, Eu, Ba) systems are reported. Sr₂SiP₄and Eu₂SiP₄, the first members of their respective ternary systems, are isostructural to previously reported Ba₂SiP₄and crystallize in the noncentrosymmetricI42d(no. 122) space group. Ba₄Si₃P₈crystallizes in the new structure type, inP2₁/c(no. 14) space group,mP‐120 Pearson symbol, Wyckoff sequencee³⁰. In the crystal structures of Sr₂SiP₄and Eu₂SiP₄all SiP₄tetrahedral building blocks are connected via formation of P–P bonds forming a three‐dimensional framework. In the crystal structure of Ba₄Si₃P₈, Si‐P tetrahedral chains formed by corner‐sharing, edge‐sharing, and P–P bonds are surrounded by Ba cations. This results in a quasi‐one‐dimensional structure. Electronic structure calculations and UV/Vis measurements suggest that theAE₂SiP₄(AE= Sr, Eu, Ba) are direct bandgap semiconductors with bandgaps of ca. 1.4 eV and have potential for thermoelectric applications.

    

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5. Electronic Structure of trans‐ [V II Cl 2 (E(CH 3 ) 2 CH 2 CH 2 E(CH 3 ) 2 ) 2 ], E=N, P

   https://doi.org/10.1002/ejic.202400395  

   Jafari, Mehrafshan G ; Zolnhofer, Eva M ; Fehn, Dominik ; Heinemann, Frank W ; Opalade, Adedamola A ; Carroll, Patrick J ; Meyer, Karsten ; Krzystek, J ; Ozarowski, Andrew ; Mindiola, Daniel J ; et al ( November 2024 , European Journal of Inorganic Chemistry)

   Coordination complexes of general formulatrans‐[MX₂(R₂ECH₂CH₂ER₂)₂] (M^II=Ti, V, Cr, Mn; E=N or P; R=alkyl or aryl) are a cornerstone of coordination and organometallic chemistry. We investigate the electronic properties of two such complexes,trans‐[VCl₂(tmeda)₂] andtrans‐[VCl₂(dmpe)₂], which thus representtrans‐[MX₂(R₂ECH₂CH₂ER₂)₂] where M=V, X=Cl, R=Me and E=N (tmeda) and P (dmpe). These V^IIcomplexes haveS=3/2 ground states, as expected for octahedral d³. Their tetragonal distortion leads to zero‐field splitting (zfs) that is modest in magnitude (D≈0.3 cm⁻¹) relative to analogousS=1 Ti^IIand Cr^IIcomplexes. This parameter was determined from conventional EPR spectroscopy, but more effectively from high‐frequency and ‐field EPR (HFEPR) that determined the sign ofDas negative for the diamine complex, but positive for the diphosphine, which information had not been known for anytrans‐[VX₂(R₂ECH₂CH₂ER₂)₂] systems. The ligand‐field parameters oftrans‐[VCl₂(tmeda)₂] andtrans‐[VCl₂(dmpe)₂] are obtained using both classical theory andab initioquantum chemical theory. The results shed light not only on the electronic structure of V^IIin this environment, but also on differences between N and P donor ligands, a key comparison in coordination chemistry.

    

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