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  • Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy
Title: Understanding the Electronic Transport of Al–Si and Al–Ge Nanojunctions by Exploiting Temperature-Dependent Bias Spectroscopy
Award ID(s):
2121643
PAR ID:
10529043
Author(s) / Creator(s):
; ; ; ; ; ;
Publisher / Repository:
American Chemical Society
Date Published:
Journal Name:
ACS Applied Materials & Interfaces
Volume:
16
Issue:
15
ISSN:
1944-8244
Page Range / eLocation ID:
19350 to 19358
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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