Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature subgap emission and single-photon response. In this Letter, we investigate the layer-dependent charge-state lifetime of Se vacancies in . In one monolayer , we observe ultrafast charge transfer from the lowest unoccupied orbital of the top Se vacancy to the graphene substrate within measured via the current saturation in scanning tunneling approach curves. For Se vacancies decoupled by transition metal dichalcogenide (TMD) multilayers, we find a subexponential increase of the charge lifetime from in bilayer to a few nanoseconds in four-layer , alongside a reduction of the defect state binding energy. Additionally, we attribute the continuous suppression and energy shift of the in-gap defect state resonances at very close tip-sample distances to a current saturation effect. Our results provide a key measure of the layer-dependent charge transfer rate of chalcogen vacancies in TMDs. Published by the American Physical Society2025 
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                            Anomalous Landau Level Gaps Near Magnetic Transitions in Monolayer WSe2
                        
                    
    
            First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of monolayer in a magnetic field. We resolve a sequence of first-order phase transitions between completely spin-polarized LLs and states with LLs of both spins. Unexpectedly, the LL gaps are roughly constant over a wide range of magnetic fields below the transitions, which we show reflects spin-polarized ground states with opposite spin excitations. These transitions also extend into compressible regimes, with a sawtooth boundary between full and partial spin polarization. We link these observations to the important influence of LL filling on the exchange energy beyond a smooth density-dependent contribution. Our results show that realizes a unique hierarchy of energy scales where such effects induce reentrant magnetic phase transitions tuned by density and magnetic field. Published by the American Physical Society2024 
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                            - Award ID(s):
- 2103910
- PAR ID:
- 10532103
- Publisher / Repository:
- American Physical Society
- Date Published:
- Journal Name:
- Physical Review X
- Volume:
- 14
- Issue:
- 3
- ISSN:
- 2160-3308
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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