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1. Layer-Dependent Charge-State Lifetime of Single Se Vacancies in ${\mathrm{WSe}}_2$

   https://doi.org/10.1103/PhysRevLett.134.076201  

   Bobzien, Laric; Allerbeck, Jonas; Krane, Nils; Ortega-Guerrero, Andres; Wang, Zihao; Figueroa, Daniel_E Cintron; Dong, Chengye; Pignedoli, Carlo A; Robinson, Joshua A; Schuler, Bruno (February 2025, Physical Review Letters)

   Defect engineering in two-dimensional semiconductors has been exploited to tune the optoelectronic properties and introduce new quantum states in the band gap. Chalcogen vacancies in transition metal dichalcogenides in particular have been found to strongly impact charge carrier concentration and mobility in 2D transistors as well as feature subgap emission and single-photon response. In this Letter, we investigate the layer-dependent charge-state lifetime of Se vacancies in ${\mathrm{WSe}}_2$ . In one monolayer ${\mathrm{WSe}}_2$ , we observe ultrafast charge transfer from the lowest unoccupied orbital of the top Se vacancy to the graphene substrate within $(1\pm 0.2)\mathrm{ps}$ measured via the current saturation in scanning tunneling approach curves. For Se vacancies decoupled by transition metal dichalcogenide (TMD) multilayers, we find a subexponential increase of the charge lifetime from $(62\pm 14)\mathrm{ps}$ in bilayer to a few nanoseconds in four-layer ${\mathrm{WSe}}_2$ , alongside a reduction of the defect state binding energy. Additionally, we attribute the continuous suppression and energy shift of the $dI/dV$ in-gap defect state resonances at very close tip-sample distances to a current saturation effect. Our results provide a key measure of the layer-dependent charge transfer rate of chalcogen vacancies in TMDs. Published by the American Physical Society2025 

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2. One-jettiness DIS event shape at ${\mathrm{N}}^3\mathrm{LL}+\mathcal{O}\left({\alpha }_s^2\right)$

   https://doi.org/10.1103/PhysRevD.110.014045  

   Cao, Haotian; Kang, Zhong-Bo; Liu, Xiaohui; Mantry, Sonny (July 2024, Physical Review D)

   We present results for the ${\tau }_1$ and ${\tau }_{1a}$ 1-jettiness global event shape distributions, for deep inelastic scattering (DIS), at the ${\mathrm{N}}^3\mathrm{LL}+\mathcal{O}\left({\alpha }_s^2\right)$ level of accuracy. These event-shape distributions quantify and characterize the pattern of final state radiation in electron-nucleus collisions. They can be used as a probe of nuclear structure functions, as nuclear medium effects in jet production, and for a precision extraction of the QCD strong coupling. The results presented here, along with the corresponding numerical codes, can be used for analyses with HERA data, in Electron-Ion Collider (EIC) simulation studies, and for eventual comparison with real EIC data. Published by the American Physical Society2024 

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3. Valence, charge transfer, and orbital-dependent correlation in bilayer nickelates ${\mathrm{Nd}}_3{\mathrm{Ni}}_2{\mathrm{O}}_7$

   https://doi.org/10.1103/PhysRevB.111.165101  

   Takegami, Daisuke; Okauchi, Takaki; Morales, Edgar Abarca; Fujinuma, Koto; Furo, Mizuki; Yoshimura, Masato; Tsuei, Ku-Ding; Pan, Grace A; Segedin, Dan Ferenc; Song, Qi; et al (April 2025, Physical Review B)

   We examine the bulk electronic structure of ${\mathrm{Nd}}_3{\mathrm{Ni}}_2{\mathrm{O}}_7$ using Ni $2p$ core-level hard x-ray photoemission spectroscopy combined with density functional theory $+$ dynamical mean-field theory. Our results reveal a large deviation of the Ni $3d$ occupation from the formal ${\mathrm{Ni}}^{2.5+}$ valency, highlighting the importance of the charge transfer from oxygen ligands. We find that the dominant $d^8$ configuration is accompanied by nearly equal contributions from $d^7$ and $d^9$ states, exhibiting an unusual valence state among Ni-based oxides. Finally, we discuss the Ni $d_{x^2-y^2}$ and $d_{z^2}$ orbital-dependent hybridization, correlation and local spin dynamics. Published by the American Physical Society2025 

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4. Absence of $E_{2g}$ Nematic Instability and Dominant $A_{1g}$ Response in the Kagome Metal ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$

   https://doi.org/10.1103/PhysRevX.14.031015  

   Liu, Zhaoyu; Shi, Yue; Jiang, Qianni; Rosenberg, Elliott W; DeStefano, Jonathan M; Liu, Jinjin; Hu, Chaowei; Zhao, Yuzhou; Wang, Zhiwei; Yao, Yugui; et al (July 2024, Physical Review X)

   Ever since the discovery of the charge density wave (CDW) transition in the kagome metal ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$ , the nature of its symmetry breaking has been under intense debate. While evidence suggests that the rotational symmetry is already broken at the CDW transition temperature ( $T_{\mathrm{CDW}}$ ), an additional electronic nematic instability well below $T_{\mathrm{CDW}}$ has been reported based on the diverging elastoresistivity coefficient in the anisotropic channel ( $m_{E_{2g}}$ ). Verifying the existence of a nematic transition below $T_{\mathrm{CDW}}$ is not only critical for establishing the correct description of the CDW order parameter, but also important for understanding low-temperature superconductivity. Here, we report elastoresistivity measurements of ${\mathrm{CsV}}_3{\mathrm{Sb}}_5$ using three different techniques probing both isotropic and anisotropic symmetry channels. Contrary to previous reports, we find the anisotropic elastoresistivity coefficient $m_{E_{2g}}$ is temperature independent, except for a step jump at $T_{\mathrm{CDW}}$ . The absence of nematic fluctuations is further substantiated by measurements of the elastocaloric effect, which show no enhancement associated with nematic susceptibility. On the other hand, the symmetric elastoresistivity coefficient $m_{A_{1g}}$ increases below $T_{\mathrm{CDW}}$ , reaching a peak value of 90 at $T^{*}=20\mathrm{K}$ . Our results strongly indicate that the phase transition at $T^{*}$ is not nematic in nature and the previously reported diverging elastoresistivity is due to the contamination from the $A_{1g}$ channel. Published by the American Physical Society2024 

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5. Robust Nodal Behavior in the Thermal Conductivity of Superconducting ${\mathrm{UTe}}_2$

   https://doi.org/10.1103/PhysRevX.15.021029  

   Hayes, Ian M; Metz, Tristin E; Frank, Corey E; Saha, Shanta R; Butch, Nicholas P; Mishra, Vivek; Hirschfeld, P J; Paglione, Johnpierre (April 2025, Physical Review X)

   The superconducting state of the heavy-fermion metal ${\mathrm{UTe}}_2$ has attracted considerable interest because of evidence of spin-triplet Cooper pairing and nontrivial topology. Progress on these questions requires identifying the presence or absence of nodes in the superconducting gap function and their dimension. In this article, we report a comprehensive study of the influence of disorder on the thermal transport in the superconducting state of ${\mathrm{UTe}}_2$ . Through detailed measurements of the magnetic-field dependence of the thermal conductivity in the zero-temperature limit, we obtain clear evidence of the presence of point nodes in the superconducting gap for all samples with transition temperatures ranging from 1.6 to 2.1 K obtained by different synthesis methods, including a refined self-flux method. This robustness implies the presence of symmetry-imposed nodes throughout the range studied, further confirmed via disorder-dependent calculations of the thermal transport in a model with a single pair of nodes. In addition to capturing the temperature dependence of the thermal conductivity up to $T_c$ , this model provides some information about the locations of the nodes, suggesting a $B_{1u}$ or $B_{2u}$ symmetry for the superconducting order parameter. Additionally, comparing the new, ultrahigh conductivity samples to older samples reveals a crossover between a low-field and a high-field regime at a single value of the magnetic field in all samples. In the high-field regime, the thermal conductivity at different disorder levels differs from each other by a simple offset, suggesting that some simple principle determines the physics of the mixed state, a fact which may illuminate trends observed in other clean nodal superconductors. Published by the American Physical Society2025 

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