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1. Li ₁₅ P ₄ S ₁₆ Cl ₃ , a Lithium Chlorothiophosphate as a Solid-State Ionic Conductor

   https://doi.org/10.1021/acs.inorgchem.9b01751  

   Liu, Zhantao; Zinkevich, Tatiana; Indris, Sylvio; He, Xingfeng; Liu, Jue; Xu, Wenqian; Bai, Jianming; Xiong, Shan; Mo, Yifei; Chen, Hailong (December 2019, Inorganic Chemistry)

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2. A Non-Volatile Threshold Sensing System Using a Ferroelectric Hf _0.5 Zr _0.5 O ₂ Device and a LiNbO ₃ Microacoustic Resonator

   https://doi.org/10.1109/MEMS49605.2023.10052395  

   Kaya, Onurcan; Colombo, Luca; Davaji, Benyamin; Cassella, Cristian (January 2023, 2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS))
3. Dielectric properties of disordered A ₆ B ₂ O ₁₇ (A = Zr; B = Nb, Ta) phases

   https://doi.org/10.1111/jace.19966  

   Spurling, R Jackson; Almishal, Saeed_S I; Casamento, Joseph; Hayden, John; Spangler, Ryan; Marakovits, Michael; Hossain, Arafat; Lanagan, Michael; Maria, Jon‐Paul (October 2024, Journal of the American Ceramic Society)

   Abstract We report on the structure and dielectric properties of ternary A₆B₂O₁₇(A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase‐homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500°C. Crystal structure, microstructure, chemistry, and dielectric properties are characterized by X‐ray diffraction and reflectivity, atomic force microscopy, X‐ray photoelectron spectroscopy, and capacitance analysis, respectively. We observe relative permittivities approaching 60 and loss tangents <1 × 10⁻²across the 10³–10⁵ Hz frequency range in the Zr₆Nb₂O₁₇and Zr₆Ta₂O₁₇phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics. 

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4. Tl ₂ Ir ₂ O ₇ : A Pauli Paramagnetic Metal, Proximal to a Metal Insulator Transition

   https://doi.org/10.1021/acs.inorgchem.0c03124  

   Feng, Hai L.; Kang, Chang-Jong; Deng, Zheng; Croft, Mark; Liu, Sizhan; Tyson, Trevor A.; Lapidus, Saul H.; Frank, Corey E.; Shi, Youguo; Jin, Changqing; et al (April 2021, Inorganic Chemistry)

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5. Is Ba ₃ In ₂ O ₆ a high-T _c superconductor?

   https://doi.org/10.1088/1361-648X/ad42f3  

   Hensling, F_V E; Dahliah, D; Smeaton, M A; Shrestha, B; Show, V; Parzyck, C T; Hennighausen, C; Kotsonis, G N; Rignanese, G-M; Barone, M R; et al (May 2024, Journal of Physics: Condensed Matter)

   Abstract It has been suggested that Ba₃In₂O₆might be a high-T_csuperconductor. Experimental investigation of the properties of Ba₃In₂O₆was long inhibited by its instability in air. Recently epitaxial Ba₃In₂O₆with a protective capping layer was demonstrated, which finally allows its electronic characterization. The optical bandgap of Ba₃In₂O₆is determined to be 2.99 eV in-the (001) plane and 2.83 eV along thec-axis direction by spectroscopic ellipsometry. First-principles calculations were carried out, yielding a result in good agreement with the experimental value. Various dopants were explored to induce (super-)conductivity in this otherwise insulating material. NeitherA- norB-site doping proved successful. The underlying reason is predominately the formation of oxygen interstitials as revealed by scanning transmission electron microscopy and first-principles calculations. Additional efforts to induce superconductivity were investigated, including surface alkali doping, optical pumping, and hydrogen reduction. To probe liquid-ion gating, Ba₃In₂O₆was successfully grown epitaxially on an epitaxial SrRuO₃bottom electrode. So far none of these efforts induced superconductivity in Ba₃In₂O_6,leaving the answer to the initial question of whether Ba₃In₂O₆is a high-T_csuperconductor to be ‘no’ thus far. 

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