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Abstract The class ofAV3Sb5(A=K, Rb, Cs) kagome metals hosts unconventional charge density wave states seemingly intertwined with their low temperature superconducting phases. The nature of the coupling between these two states and the potential presence of nearby, competing charge instabilities however remain open questions. This phenomenology is strikingly highlighted by the formation of two ‘domes’ in the superconducting transition temperature upon hole-doping CsV3Sb5. Here we track the evolution of charge correlations upon the suppression of long-range charge density wave order in the first dome and into the second of the hole-doped kagome superconductor CsV3Sb5−xSnx. Initially, hole-doping drives interlayer charge correlations to become short-ranged with their periodicity diminished along the interlayer direction. Beyond the peak of the first superconducting dome, the parent charge density wave state vanishes and incommensurate, quasi-1D charge correlations are stabilized in its place. These competing, unidirectional charge correlations demonstrate an inherent electronic rotational symmetry breaking in CsV3Sb5, and reveal a complex landscape of charge correlations within its electronic phase diagram. Our data suggest an inherent 2kfcharge instability and competing charge orders in theAV3Sb5class of kagome superconductors.
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Electron hole asymmetry in the phase diagram of carrier-tuned CsV3Sb5
In this work, we study the effect of electron doping on the kagome superconductor CsV3Sb5. Single crystals and powders of CsV3Sb5−xTexare synthesized and characterized via magnetic susceptibility, nuclear quadrupole resonance, and x-ray diffraction measurements, where we observe a slight suppression of the charge density wave transition temperature and superconducting temperature with the introduction of electron dopants. In contrast to hole doping, both transitions survive relatively unperturbed up to the solubility limit of Te within the lattice. A comparison is presented between the electronic phase diagrams of electron- and hole-tuned CsV3Sb5.
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- Award ID(s):
- 1905532
- PAR ID:
- 10539687
- Publisher / Repository:
- Frontiers
- Date Published:
- Journal Name:
- Frontiers in Electronic Materials
- Volume:
- 3
- ISSN:
- 2673-9895
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3389/femat.2023.1257490
