Abstract Monolayer transition-metal dichalcogenides (TMDCs) show a wealth of exciton physics. Here, we report the existence of a new excitonic species, the high-lying exciton (HX), in single-layer WSe 2 with an energy of ~3.4 eV, almost twice the band-edge A-exciton energy, with a linewidth as narrow as 5.8 meV. The HX is populated through momentum-selective optical excitation in the K -valleys and is identified in upconverted photoluminescence (UPL) in the UV spectral region. Strong electron-phonon coupling results in a cascaded phonon progression with equidistant peaks in the luminescence spectrum, resolvable to ninth order. Ab initio GW -BSE calculations with full electron-hole correlations explain HX formation and unmask the admixture of upper conduction-band states to this complex many-body excitation. These calculations suggest that the HX is comprised of electrons of negative mass. The coincidence of such high-lying excitonic species at around twice the energy of band-edge excitons rationalizes the excitonic quantum-interference phenomenon recently discovered in optical second-harmonic generation (SHG) and explains the efficient Auger-like annihilation of band-edge excitons.
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Maximally localized exciton Wannier functions for solids
We introduce a maximally localized Wannier function representation of Bloch excitons, two-particle correlated electron-hole excitations, in crystalline solids, where the excitons are maximally localized with respect to an average electron-hole coordinate in real space. As a proof-of-concept, we illustrate this representation in the case of low-energy spin-singlet and -triplet excitons in cubic lithium fluoride, computed using the ab initio Bethe-Salpeter equation approach. We visualize the resulting maximally localized exciton Wannier functions (MLXWFs) in real space, detail the convergence of the exciton Wannier spreads, and demonstrate how Wannier-Fourier interpolation can be leveraged to obtain exciton energies and states at arbitrary exciton crystal momenta in the Brillouin zone. We further introduce an approach to treat the long-range dipolar coupling between singlet MLXWFs and discuss it in depth. The MLXWF representation sheds light on the fundamental nature of excitons and paves the way toward Wannier-based post-processing of excitonic properties, enabling the construction of ab initio exciton tight-binding models, efficient interpolation of the exciton-phonon vertex, the computation of Berry curvature associated with exciton bands, and beyond.
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- Award ID(s):
- 2114081
- NSF-PAR ID:
- 10539768
- Publisher / Repository:
- Physical Review B
- Date Published:
- Journal Name:
- Physical Review B
- Volume:
- 108
- Issue:
- 12
- ISSN:
- 2469-9950
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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We develop an ab initio nonadiabatic molecular dynamics (NAMD) method based on GW plus real-time Bethe-Salpeter equation ( GW + rtBSE-NAMD) for the spin-resolved exciton dynamics. From investigations on MoS 2 , we provide a comprehensive picture of spin-valley exciton dynamics where the electron-phonon (e-ph) scattering, spin-orbit interaction (SOI), and electron-hole (e-h) interactions come into play collectively. In particular, we provide a direct evidence that e-h exchange interaction plays a dominant role in the fast valley depolarization within a few picoseconds, which is in excellent agreement with experiments. Moreover, there are bright-to-dark exciton transitions induced by e-ph scattering and SOI. Our study proves that e-h many-body effects are essential to understand the spin-valley exciton dynamics in transition metal dichalcogenides and the newly developed GW + rtBSE-NAMD method provides a powerful tool for exciton dynamics in extended systems with time, space, momentum, energy, and spin resolution.more » « less
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Abstract Computing electron–defect (
e –d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently computee –d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation and the approach can significantly speed up calculations ofe –d relaxation times and defect-limited charge transport. We show example calculations of neutral vacancy defects in silicon and copper, for which we compute thee –d relaxation times on fine uniform and random Brillouin zone grids (and for copper, directly on the Fermi surface), as well as the defect-limited resistivity at low temperature. Our interpolation approach opens doors for atomistic calculations of charge carrier dynamics in the presence of defects.
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1103/PhysRevB.108.125118
