Mariappan, Dhanushkodi D, Kim, Sanha, Zhao, Junjie, Zhao, Hangbo, Muecke, Ulrich, Gleason, Karen, Akinwande, Akintunde Ibitayo, and Hart, A John. Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography. Retrieved from https://par.nsf.gov/biblio/10541904. ACS Applied Nano Materials 6.7 Web. doi:10.1021/acsanm.2c03247.

Mariappan, Dhanushkodi D, Kim, Sanha, Zhao, Junjie, Zhao, Hangbo, Muecke, Ulrich, Gleason, Karen, Akinwande, Akintunde Ibitayo, & Hart, A John. Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography. ACS Applied Nano Materials, 6 (7). Retrieved from https://par.nsf.gov/biblio/10541904. https://doi.org/10.1021/acsanm.2c03247

Mariappan, Dhanushkodi D, Kim, Sanha, Zhao, Junjie, Zhao, Hangbo, Muecke, Ulrich, Gleason, Karen, Akinwande, Akintunde Ibitayo, and Hart, A John. "Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography". ACS Applied Nano Materials 6 (7). Country unknown/Code not available: American Chemical Society. https://doi.org/10.1021/acsanm.2c03247. https://par.nsf.gov/biblio/10541904.

@article{osti_10541904,
place = {Country unknown/Code not available}, title = {Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography}, url = {https://par.nsf.gov/biblio/10541904}, DOI = {10.1021/acsanm.2c03247}, abstractNote = {}, journal = {ACS Applied Nano Materials}, volume = {6}, number = {7}, publisher = {American Chemical Society}, author = {Mariappan, Dhanushkodi D and Kim, Sanha and Zhao, Junjie and Zhao, Hangbo and Muecke, Ulrich and Gleason, Karen and Akinwande, Akintunde Ibitayo and Hart, A John}, }