Environmentally responsible synthesis of high-performance P2-Na 2/3 [Ni 1/3 Mn 2/3 ]O 2 sodium-ion battery cathodes
An environmentally responsible synthesis of Na2/3[Ni1/3Mn2/3]O2(NNMO) enabled by direct conversion of metallic Ni powder, releasing only O2and H2O as byproducts. The resulting NNMO exhibits excellent cycling performance as a Na-ion battery cathode.
more »
« less
- Award ID(s):
- 2134715
- PAR ID:
- 10543221
- Publisher / Repository:
- RSC
- Date Published:
- Journal Name:
- Journal of Materials Chemistry A
- ISSN:
- 2050-7488
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
Atomic doping to enhance the p-type behavior of BiFeO 3 photoelectrodes for solar H 2 O 2 productionNa-doped BiFeO3demonstrates an enhanced p-type behavior compared to p-type BiFeO3prepared without extrinsic dopants, and Na-doped BiFeO3can serve as a photocathode for solar O2reduction to H2O2when coupled with Ag nanoparticle catalysts.more » « less
-
We report on growth and electrical properties of α-Ga2O3films prepared by halide vapor phase epitaxy (HVPE) at 500 °C on α-Cr2O3buffers predeposited on sapphire by magnetron sputtering. The α-Cr2O3buffers showed a wide microcathodoluminescence (MCL) peak near 350 nm corresponding to the α-Cr2O3bandgap and a sharp MCL line near 700 nm due to the Cr+intracenter transition. Ohmic contacts to Cr2O3were made with both Ti/Au or Ni, producing linear current–voltage ( I– V) characteristics over a wide temperature range with an activation energy of conductivity of ∼75 meV. The sign of thermoelectric power indicated p-type conductivity of the buffers. Sn-doped, 2- μm-thick α-Ga2O3films prepared on this buffer by HVPE showed donor ionization energies of 0.2–0.25 eV, while undoped films were resistive with the Fermi level pinned at ECof 0.3 eV. The I– V and capacitance–voltage ( C– V) characteristics of Ni Schottky diodes on Sn-doped samples using a Cr2O3buffer indicated the presence of two face-to-face junctions, one between n-Ga2O3and p-Cr2O3, the other due to the Ni Schottky diode with n-Ga2O3. The spectral dependence of the photocurrent measured on the structure showed the presence of three major deep traps with optical ionization thresholds near 1.3, 2, and 2.8 eV. Photoinduced current transient spectroscopy spectra of the structures were dominated by deep traps with an ionization energy of 0.95 eV. These experiments suggest another pathway to obtain p–n heterojunctions in the α-Ga2O3system.more » « less
-
The crystal structure of the title compound, hexaaquanickel(II) dichloride–1,4,7,10,13,16-hexaoxacyclooctadecane–water (1/2/2), [Ni(H2O)6]Cl2·2C12H24O6·2H2O, is reported. The asymmetric unit contains half of the Ni(OH2)6moiety with a formula of C12H32ClNi0.50O10at 105 K and triclinic (P1) symmetry. The [Ni(OH2)6]2+cation has close to ideal octahedral geometry with O—Ni—O bond angles that are within 3° of idealized values. The supramolecular structure includes hydrogen bonding between the water ligands, 18-crown-6 molecules, Cl−anions, and co-crystallized water solvent. Two crown ether molecules flank the [Ni(OH2)6]2+molecule at the axial positions in a sandwich-like structure. The relatively symmetric hydrogen-bonding network is enabled by small Cl−counter-ions and likely influences the more idealized octahedral geometry of [Ni(OH2)6]2+.more » « less
-
Abstract Self‐sustaining photocatalytic NO3−reduction systems could become ideal NO3−removal methods. Developing an efficient, highly active photocatalyst is the key to the photocatalytic reduction of NO3−. In this work, we present the synthesis of Ni2P‐modified Ta3N5(Ni2P/Ta3N5), TaON (Ni2P/TaON), and TiO2(Ni2P/TiO2). Starting with a 2 mM (28 g/mL NO3−−N) aqueous solution of NO3−, as made Ni2P/Ta3N5and Ni2P/TaON display as high as 79% and 61% NO3−conversion under 419 nm light within 12 h, which correspond to reaction rates per gram of 196 μmol g−1 h−1and 153 μmol g−1 h−1, respectively, and apparent quantum yields of 3–4%. Compared to 24% NO3−conversion in Ni2P/TiO2, Ni2P/Ta3N5and Ni2P/TaON exhibit higher activities due to the visible light active semiconductor (SC) substrates Ta3N5and TaON. We also discuss two possible electron migration pathways in Ni2P/semiconductor heterostructures. Our experimental results suggest one dominant electron migration pathway in these materials, namely: Photo‐generated electrons migrate from the semiconductor to co‐catalyst Ni2P, and upshift its Fermi level. The higher Fermi level provides greater driving force and allows NO3−reduction to occur on the Ni2P surface.more » « less
An official website of the United States government

