Phase change memory devices become practical for non-volatile storage at small dimensions due to reduced power and predictable device operation. In larger scale cells, devices can be locally melted due to filament formation and liquid filaments can be retained in parts of the cell for a long time even if most or all of the cells are initially amorphized during long fall-times. The complex amorphization and crystallization dynamics make these large cells more unpredictable and enable their applications as physically unclonable functions (PUF) [1,2]. Computational analysis of the complex amorphization-crystallization dynamics in phase change memory devices with large geometries is important to understand the evolution of phase distributions and temperature profiles during programming of these devices. In this work, we conduct electrothermal finite element simulations of reset operation on a large Ge2Sb2Te5 (GST) cell using the framework we have developed in COMSOL multiphysics [3]-[9] and analyze the complex dynamics of amorphization, nucleation and growth during electrical stress. We input voltage waveforms measured from electrical characterization of on-oxide GST line cells with bottom metal contact pads and Si3N4 capping. A 2D polycrystalline model of the experimentally measured cells (~360 nm wide, ~400 nm long and ~50 nm thick) is constructed in the simulations. Access devices are modeled using the spice models. The simulations capture some of the interplay between changes in the device resistance due to heating and phase changes and current fluctuations.
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Measurement-driven Langevin modeling of superparamagnetic tunnel junctions
Superparamagnetic tunnel junctions are important devices for a range of emerging technologies, but most existing compact models capture only their mean switching rates. Capturing qualitatively accurate analog dynamics of these devices will be important as the technology scales up. Here we present results using a one-dimensional overdamped Langevin equation that captures statistical properties of measured time traces, including voltage histograms, drift and diffusion characteristics as measured with KramersMoyal coefficients, and dwell-time distributions. While common macrospin models are more physically motivated magnetic models than the Langevin model, we show that for the device measured here, they capture even fewer of the measured experimental behaviors.
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- Award ID(s):
- 2121957
- PAR ID:
- 10545856
- Publisher / Repository:
- American Physical Society
- Date Published:
- Journal Name:
- Physical Review Applied
- Volume:
- 22
- Issue:
- 1
- ISSN:
- 2331-7019
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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