skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO 2
Award ID(s):
2344819
PAR ID:
10546825
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
IEEE
Date Published:
Journal Name:
IEEE Transactions on Electron Devices
Volume:
71
Issue:
8
ISSN:
0018-9383
Page Range / eLocation ID:
4655 to 4663
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract A synaptic memristor using 2D ferroelectric junctions is a promising candidate for future neuromorphic computing with ultra‐low power consumption, parallel computing, and adaptive scalable computing technologies. However, its utilization is restricted due to the limited operational voltage memory window and low on/off current (ION/OFF) ratio of the memristor devices. Here, it is demonstrated that synaptic operations of 2D In2Se3ferroelectric junctions in a planar memristor architecture can reach a voltage memory window as high as 16 V (±8 V) and ION/OFFratio of 108, significantly higher than the current literature values. The power consumption is 10−5 W at the on state, demonstrating low power usage while maintaining a large ION/OFFratio of 108compared to other ferroelectric devices. Moreover, the developed ferroelectric junction mimicked synaptic plasticity through pulses in the pre‐synapse. The nonlinearity factors are obtained 1.25 for LTP, −0.25 for LTD, respectively. The single‐layer perceptron (SLP) and convolutional neural network (CNN) on‐chip training results in an accuracy of up to 90%, compared to the 91% in an ideal synapse device. Furthermore, the incorporation of a 3 nm thick SiO2interface between the α‐In2Se3and the Au electrode resulted in ultrahigh performance among other 2D ferroelectric junction devices to date. 
    more » « less
  2. null (Ed.)
    Two-dimensional (2D) transition metal dichalcogenide (TMD) layers have gained increasing attention for a variety of emerging electrical, thermal, and optical applications. Recently developed metallic 2D TMD layers have been projected to exhibit unique attributes unattainable in their semiconducting counterparts; e.g. , much higher electrical and thermal conductivities coupled with mechanical flexibility. In this work, we explored 2D platinum ditelluride (2D PtTe 2 ) layers – a relatively new class of metallic 2D TMDs – by studying their previously unexplored electro-thermal properties for unconventional window applications. We prepared wafer-scale 2D PtTe 2 layer-coated optically transparent and mechanically flexible willow glasses via a thermally-assisted tellurization of Pt films at a low temperature of 400 °C. The 2D PtTe 2 layer-coated windows exhibited a thickness-dependent optical transparency and electrical conductivity of >10 6 S m −1 – higher than most of the previously explored 2D TMDs. Upon the application of electrical bias, these windows displayed a significant increase in temperature driven by Joule heating as confirmed by the infrared (IR) imaging characterization. Such superior electro-thermal conversion efficiencies inherent to 2D PtTe 2 layers were utilized to demonstrate various applications, including thermochromic displays and electrically-driven defogging windows accompanying mechanical flexibility. Comparisons of these performances confirm the superiority of the wafer-scale 2D PtTe 2 layers over other nanomaterials explored for such applications. 
    more » « less