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Elucidating the Role of Ferroelectric in Memory Window Expansion of Ferroelectric FETs With Gate-Side Injection
- Award ID(s):
- 2344819
- PAR ID:
- 10628240
- Publisher / Repository:
- IEEE
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 72
- Issue:
- 5
- ISSN:
- 0018-9383
- Page Range / eLocation ID:
- 2708 to 2715
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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