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Abstract The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 nm Fe0.5Rh0.5/100 nm 0.68PbMg1/3Nb2/3O3‐0.32PbTiO3(PMN‐PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain‐induced changes in the Fe0.5Rh0.5mediated by voltages applied to the PMN‐PT. We describe approaches to achieve high‐quality, epitaxial growth of Fe0.5Rh0.5on the PMN‐PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin‐film devices via studies of the anomalous Hall effect. By comparing the spin‐flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10−8 s m−1at 325 K while applying a −0.75 V bias.
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A nonsolvolytic fluorine/LiNO 3 -containing electrolyte for stabilizing dynamic interfaces in Li||LiMn 2 O 4 batteries
Complementary characterization results show that chemical dissolution of transition metal in LiMn2O4is caused by solvolysis-generated HF, which can be suppresed by rational design of a group of nonsolvolytic electrolytes.
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- Award ID(s):
- 1719875
- PAR ID:
- 10548901
- Publisher / Repository:
- Royal Society of Chemistry
- Date Published:
- Journal Name:
- RSC Advances
- Volume:
- 14
- Issue:
- 21
- ISSN:
- 2046-2069
- Page Range / eLocation ID:
- 14964 to 14972
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/D3RA08016A
