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In this work, hafnium zirconium oxide (HZO)-based 100 × 100 nm2 ferroelectric tunnel junction (FTJ) devices were implemented on a 300 mm wafer platform, using a baseline 65 nm CMOS process technology. FTJs consisting of TiN/HZO/TiN were integrated in between metal 1 (M1) and via 1 (V1) layers. Cross-sectional transmission electron microscopy and energy dispersive x-ray spectroscopy analysis confirmed the targeted thickness and composition of the FTJ film stack, while grazing incidence, in-plane x-ray diffraction analysis demonstrated the presence of orthorhombic phase Pca21 responsible for ferroelectric polarization observed in HZO films. Current measurement, as a function of voltage for both up- and down-polarization states, yielded a tunneling electroresistance (TER) ratio of 2.28. The device TER ratio and endurance behavior were further optimized by insertion of thin Al2O3 tunnel barrier layer between the bottom electrode (TiN) and ferroelectric switching layer (HZO) by tuning the band offset between HZO and TiN, facilitating on-state tunneling conduction and creating an additional barrier layer in off-state current conduction path. Investigation of current transport mechanism showed that the current in these FTJ devices is dominated by direct tunneling at low electric field (E < 0.4 MV/cm) and by Fowler–Nordheim (F–N) tunneling at high electric field (E > 0.4 MV/cm). The modified FTJ device stack (TiN/Al2O3/HZO/TiN) demonstrated an enhanced TER ratio of ∼5 (2.2× improvement) and endurance up to 106 switching cycles. Write voltage and pulse width dependent trade-off characteristics between TER ratio and maximum endurance cycles (Nc) were established that enabled optimal balance of FTJ switching metrics. The FTJ memory cells also showed multi-level-cell characteristics, i.e., 2 bits/cell storage capability. Based on full 300 mm wafer statistics, a switching yield of >80% was achieved for fabricated FTJ devices demonstrating robustness of fabrication and programming approach used for FTJ performance optimization. The realization of CMOS-compatible nanoscale FTJ devices on 300 mm wafer platform demonstrates the promising potential of high-volume large-scale industrial implementation of FTJ devices for various nonvolatile memory applications.
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Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing
Abstract Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and transistors due to its superior scalability and seamless integration with complementary metal‐oxide‐semiconductor processing. A major challenge in developing this emerging ferroelectric material is the metastable nature of the non‐centrosymmetric polar phase responsible for ferroelectricity, resulting in a coexistence of both polar and non‐polar phases with uneven grain sizes and random orientations. Due to the structural similarity between the multiple phases and the nanoscale dimensions of the thin film devices, accurate measurement of phase‐specific information remains challenging. Here, the application of 4D scanning transmission electron microscopy is demonstrated with automated electron diffraction pattern indexing to analyze multiphase polycrystalline HZO thin films, enabling the characterization of crystallographic phase and orientation across large working areas on the order of hundreds of nanometers. This approach offers a powerful characterization framework to produce a quantitative and statistically robust analysis of the intricate structure of HZO films by uncovering phase composition, polarization axis alignment, and unique phase distribution within the HZO film. This study introduces a novel approach for analyzing ferroelectric HZO, facilitating reliable characterization of process‐structure‐property relationships imperative to accelerating the growth optimization, performance, and successful implementation of ferroelectric HZO in devices.
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- Award ID(s):
- 2338558
- PAR ID:
- 10553169
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Small Methods
- ISSN:
- 2366-9608
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1002/smtd.202400395
