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  • Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi 2 Te 4 Using Molecular Beam Epitaxy: Implications for Defect Control
Title: Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi 2 Te 4 Using Molecular Beam Epitaxy: Implications for Defect Control
Award ID(s):
2219610 2039351 1539916
PAR ID:
10553258
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
ACS applied nano material
Date Published:
Journal Name:
ACS Applied Nano Materials
Volume:
7
Issue:
17
ISSN:
2574-0970
Page Range / eLocation ID:
21149 to 21159
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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