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Phase pure β-(Al x Ga 1−x ) 2 O 3 thin films are grown on (001) oriented β-Ga 2 O 3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(Al x Ga 1−x ) 2 O 3 films is demonstrated with up to 25% Al compositions as evaluated by high resolution x-ray diffraction. The asymmetrical reciprocal space mapping confirms the growth of coherent β-(Al x Ga 1−x ) 2 O 3 films (x < 25%) on (001) β-Ga 2 O 3 substrates. However, the alloy inhomogeneity with local segregation of Al along the ([Formula: see text]) plane is observed from atomic resolution STEM imaging, resulting in wavy and inhomogeneous interfaces in the β-(Al x Ga 1−x ) 2 O 3 /β-Ga 2 O 3 superlattice structure. Room temperature Raman spectra of β-(Al x Ga 1−x ) 2 O 3 films show similar characteristics peaks as the (001) β-Ga 2 O 3 substrate without obvious Raman shifts for films with different Al compositions. Atom probe tomography was used to investigate the atomic level structural chemistry with increasing Al content in the β-(Al x Ga 1−x ) 2 O 3 films. A monotonous increase in chemical heterogeneity is observed from the in-plane Al/Ga distributions, which was further confirmed via statistical frequency distribution analysis. Although the films exhibit alloy fluctuations, n-type doping demonstrates good electrical properties for films with various Al compositions. The determined valence and conduction band offsets at β-(Al x Ga 1−x ) 2 O 3 /β-Ga 2 O 3 heterojunctions using x-ray photoelectron spectroscopy reveal the formation of type-II (staggered) band alignment.
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This content will become publicly available on October 1, 2025
Abnormal Magnetic Phase Transition in Mixed‐Phase (110)‐Oriented FeRh Films on Al 2 O 3 Substrates via the Anomalous Nernst Effect
Abstract Iron rhodium (FeRh) undergoes a first‐order anti‐ferromagnetic to ferromagnetic phase transition above its Curie temperature. By measuring the anomalous Nernst effect (ANE) in (110)‐oriented FeRh films on Al2O3substrates, the ANE thermopower over a temperature range of 100–350 K is observed, with similar magnetic transport behaviors observed for in‐plane magnetization (IM) and out‐of‐plane magnetization (PM) configurations. The temperature‐dependent magnetization–magnetic field strength (M–H) curves revealed that the ANE voltage is proportional to the magnetization of the material, but additional features magnetic textures not shown in the M‐H curves remained intractable. In particular, a sign reversal occurred for the ANE thermopower signal near zero field in the mixed‐magnetic‐phase films at low temperatures, which is attributed to the diamagnetic properties of the Al2O3substrate. Finite element method simulations associated with the Heisenberg spin model and Landau–Lifshitz–Gilbert equation strongly supported the abnormal heat transport behavior from the Al2O3substrate during the experimentally observed magnetic phase transition for the IM and PM configurations. The results demonstrate that FeRh films on an Al2O3substrate exhibit unusual behavior compared to other ferromagnetic materials, indicating their potential for use in novel applications associated with practical spintronics device design, neuromorphic computing, and magnetic memory.
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- Award ID(s):
- 2230352
- PAR ID:
- 10556111
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Small
- Volume:
- 20
- Issue:
- 43
- ISSN:
- 1613-6810
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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