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Abstract Iron garnets that combine robust perpendicular magnetic anisotropy (PMA) with low Gilbert damping are desirable for studies of magnetization dynamics as well as spintronic device development. This paper reports the magnetic properties of low‐damping bismuth‐substituted iron garnet thin films (Bi0.8Y2.2Fe5O12) grown on a series of single‐crystal gallium garnet substrates. The anisotropy is dominated by magnetoelastic and growth‐induced contributions. Both stripe and triangular domains form during field cycling of PMA films, with triangular domains evident in films with higher PMA. Ferromagnetic resonance measurements show damping as low as 1.3 × 10−4with linewidths of 2.7 to 5.0 mT. The lower bound for the spin‐mixing conductance of BiYIG/Pt bilayers is similar to that of other iron garnet/Pt bilayers.
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Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low damping
Abstract Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure Li0.5Al1.0Fe1.5O4(LAFO) films on MgGa2O4(MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.
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- PAR ID:
- 10508503
- Publisher / Repository:
- Nature
- Date Published:
- Journal Name:
- Nature Communications
- Volume:
- 14
- Issue:
- 1
- ISSN:
- 2041-1723
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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