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In this research we introduce the application of an optical fiber Fabry-Pérot interferometer in smart manufacturing. We used an optical fiber Fabry-Pérot interferometer to measure the distance between a moving target and a fixed optical fiber. When the target moves, the distance between the fiber and the target can be precisely determined. First, we monitored the distance between a fixed fiber and the surface of a rotating tool. By measuring the distance, we reconstructed the three-dimensional (3D) profile of the tool. We also introduce the method to calculate the runout and tool wear. To further improve the speed of this method, we developed machine learning models to find out the distance from the spectrum of the interferometer since the spectrum analyzing method is relatively slow. It was found that the Deep Neural Network model predicts the distance between the fiber and the target surface with a sufficient precision (< 4 μm) when measuring the straightness error of a computer numerical control (CNC) machine tool. The proposed method provides possibilities for noncontact precise monitoring especially in a limited space.
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Three-Dimensional Profile Reconstruction and Internal Defect Detection of Silicon Wafers Using Cascaded Fiber Optic Fabry–Pérot Interferometer and Leaky Field Detection Technologies
Abstract Wafer quality control is one of the important processes to improve the yield rate of semiconductor products. Profile quality and defects in the wafer are two key factors that should be taken into consideration. In this research, we introduce a method that measures the profile of the upper surface and the thickness of the wafer at the same time using an optical fiber cascaded Fabry–Pérot interferometer working at wavelength of 1550 nm. Therefore, the 3D profile of the wafer can be reconstructed directly. Testing results show that both accuracy and precision of the Fabry–Pérot interferometer are within a nanometer scale. Defects, especially those embedded inside the wafer, will be detected by monitoring the leaky field with treating wafers as slab waveguides. With the leaky field detection, defects on the lower surface of the wafer were successfully detected by monitoring the leaky field above the upper surface of the wafer. Compared with traditional methods such as radiographic testing or computed tomography testing, the proposed methods provide a cost-effective alternative for wafer quality evaluation.
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- Award ID(s):
- 2125826
- PAR ID:
- 10567903
- Publisher / Repository:
- American Society of Mechanical Engineers (ASME)
- Date Published:
- Journal Name:
- Journal of Manufacturing Science and Engineering
- Volume:
- 146
- Issue:
- 7
- ISSN:
- 1087-1357
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1115/1.4065523
