skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Effects of elevated-temperature deposition on the atomic structure of amorphous Ta2O5 films
Brownian thermal noise as a result of mechanical loss in optical coatings will become the dominant source of noise at the most sensitive frequencies of ground-based gravitational-wave detectors. Experiments found, however, that a candidate material, amorphous Ta2O5, is unable to form an ultrastable glass and, consequently, to yield a film with significantly reduced mechanical loss through elevated-temperature deposition alone. X-ray scattering PDF measurements are carried out on films deposited and subsequently annealed at various temperatures. Inverse atomic modeling is used to analyze the short and medium range features in the atomic structure of these films. Furthermore, in silico deposition simulations of Ta2O5 are carried out at various substrate temperatures and an atomic level analysis of the growth at high temperatures is presented. It is observed that upon elevated-temperature deposition, short range features remain identical, whereas medium range order increases. After annealing, however, both the short and medium range orders of films deposited at different substrate temperatures are nearly identical. A discussion on the surface diffusion and glass transition temperatures indicates that future pursuits of ultrastable low-mechanical-loss films through elevated temperature deposition should focus on materials with a high surface mobility, and/or lower glass transition temperatures in the range of achievable deposition temperatueres.  more » « less
Award ID(s):
2011706 2011571 2309086
PAR ID:
10569116
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ; ;
Publisher / Repository:
American Institute of Physics
Date Published:
Journal Name:
APL Materials
Volume:
11
Issue:
12
ISSN:
2166-532X
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Glasses are nonequilibrium solids with properties highly dependent on their method of preparation. In vapor-deposited molecular glasses, structural organization could be readily tuned with deposition rate and substrate temperature. Here, we show that the atomic arrangement of strong network-forming GeO 2 glass is modified at medium range (<2 nm) through vapor deposition at elevated temperatures. Raman spectral signatures distinctively show that the population of six-membered GeO 4 rings increases at elevated substrate temperatures. Deposition near the glass transition temperature is more efficient than postgrowth annealing in modifying atomic structure at medium range. The enhanced medium-range organization correlates with reduction of the room temperature internal friction. Identifying the microscopic origin of room temperature internal friction in amorphous oxides is paramount to design the next-generation interference coatings for mirrors of the end test masses of gravitational wave interferometers, in which the room temperature internal friction is a main source of noise limiting their sensitivity. 
    more » « less
  2. The ability to observe astronomical events through the detection of gravitational waves relies on the quality of multilayer coatings used on the optical mirrors of interferometers. Amorphous Ta2O5 (including TiO2:Ta2O5) currently limits detector sensitivity due to high mechanical loss. In this paper, mechanical loss measured at both cryogenic and room temperatures of amorphous Ta2O5 films grown by magnetron sputtering and annealed in air at 500 ◦C is shown to decrease for elevated growth temperature. Films grown at 310 ◦C and annealed yield a mechanical loss of 3.1×10−4 at room temperature, the lowest value reported for pure amorphous Ta2O5 grown by magnetron sputtering to date, and comparable to the lowest values obtained for films grown by ion beam sputtering. Additionally, the refractive index n increases 6% for elevated growth temperature, which could lead to improved sensitivity of gravitational-wave detectors by allowing a thickness reduction in the mirrors’ coatings. Structural characterization suggests that the observed mechanical loss reduction in amorphous Ta2O5 films with increasing growth temperature correlates with a reduction in the coordination number between oxygen and tantalum atoms, consistent with TaOx polyhedra with increased corner-sharing and reduced edge- and facesharing structures. 
    more » « less
  3. Glassy films of methyl-m-toluate have been vapor deposited onto a substrate equipped with interdigitated electrodes, facilitating in situ dielectric relaxation measurements during and after deposition. Samples of 200 nm thickness have been deposited at rates of 0.1 nm/s at a variety of deposition temperatures between 40 K and Tg = 170 K. With increasing depth below the surface, the dielectric loss changes gradually from a value reflecting a mobile surface layer to that of the kinetically stable glass. The thickness of this more mobile layer varies from below 1 to beyond 10 nm as the deposition temperature is increased, and its average fictive temperature is near Tg for all deposition temperatures. Judged by the dielectric loss, the liquid-like portion of the surface layer exceeds a thickness of 1 nm only for deposition temperatures above 0.8Tg, where near-equilibrium glassy states are obtained. After deposition, the dielectric loss of the material positioned about 5–30 nm below the surface decreases for thousands of seconds of annealing time, whereas the bulk of the film remains unchanged. 
    more » « less
  4. A series of different high κ dielectrics such as HfO2, ZrO2, and Al2O3 thin films were studied as an alternative material for the possible replacement of traditional SiO2. These large areas, as well as conformal dielectrics thin films, were grown by the atomic layer deposition technique on a p-type silicon substrate at two different deposition temperatures (150 and 250 °C). Atomic force microscopic study reveals that the surface of the films is very smooth with a measured rms surface roughness value of less than 0.4 nm in some films. After the deposition of the high κ layer, a top metal electrode was deposited onto it to fabricate metal oxide semiconductor capacitor (MOSCAP) structures. The I–V curve reveals that the sample growth at high temperatures exhibits a high resistance value and lower leakage current densities. Frequency-dependent (100 kHz to 1 MHz) C–V characteristics of the MOSCAPs were studied steadily. Furthermore, we have prepared a metal oxide semiconductor field-effect transistor device with Al-doped ZnO as a channel material, and the electrical characteristic of the device was studied. The effect of growth temperature on the structure, surface morphology, crystallinity, capacitance, and dielectric properties of the high κ dielectrics was thoroughly analyzed through several measurement techniques, such as XRD, atomic force microscopy, semiconductor parameter analysis, and ultraviolet-visible spectroscopy. 
    more » « less
  5. We study the structure of vapor-deposited glasses of five common organic semiconductors as a function of substrate temperature during deposition, using synchrotron X-ray scattering. For deposition at a substrate temperature of ∼0.8 T g (where T g is the glass transition temperature), we find a generic tendency towards “face-on” packing in glasses of anisotropic molecules. At higher substrate temperature however this generic behavior breaks down; glasses of rod-shaped molecules exhibit a more pronounced tendency for end-on packing. Our study provides guidelines to create face-on and end-on packing motifs in organic glasses, which can promote efficient charge transport in OLED and OFET devices respectively. 
    more » « less