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1. Isotope engineering for spin defects in van der Waals materials

   https://doi.org/10.1038/s41467-023-44494-3  

   Gong, Ruotian; Du, Xinyi; Janzen, Eli; Liu, Vincent; Liu, Zhongyuan; He, Guanghui; Ye, Bingtian; Li, Tongcang; Yao, Norman Y; Edgar, James H; et al (December 2024, Nature Communications)

   Abstract Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$) in hexagonal boron nitride (hBN), we grow isotopically purified h¹⁰B¹⁵N crystals. Compared to$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$spin transitions as well as extended coherence timeT₂and relaxation timeT₁. For quantum sensing,$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$centers in our h¹⁰B¹⁵N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor¹⁵N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials. 

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2. Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

   https://doi.org/10.1038/s41467-023-39115-y  

   Gong, Ruotian; He, Guanghui; Gao, Xingyu; Ju, Peng; Liu, Zhongyuan; Ye, Bingtian; Henriksen, Erik A.; Li, Tongcang; Zu, Chong (June 2023, Nature Communications)

   Abstract Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ($${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of$${{{{{{{{\rm{V}}}}}}}}}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ $V_B^{-}$, which are important for future use of defects in hBN as quantum sensors and simulators. 

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3. Magnetogram-matching Biot–Savart Law and Decomposition of Vector Magnetograms

   https://doi.org/10.3847/1538-4357/add895  

   Titov, Viacheslav S; Downs, Cooper; Török, Tibor; Linker, Jon A; Prazak, Michael; Qiu, Jiong A (July 2025, The Astrophysical Journal)

   Abstract We generalize a magnetogram-matching Biot–Savart law (BSl) from planar to spherical geometry. For a given coronal current densityJ, this law determines the magnetic field $\tilde{\mathit{B}}$whose radial component vanishes at the surface. The superposition of $\tilde{\mathit{B}}$with a potential field defined by a given surface radial field,B_r, provides the entire configuration whereB_rremains unchanged by the currents. Using this approach, we (1) upgrade our regularized BSls for constructing coronal magnetic flux ropes (MFRs) and (2) propose a new method for decomposing a measured photospheric magnetic field as $\mathit{B}={\mathit{B}}_{\mathrm{pot}}+{\mathit{B}}_T+{\mathit{B}}_{\tilde{S}}$, where the potential,B_pot, toroidal,B_T, and poloidal, ${\mathit{B}}_{\tilde{S}}$, fields are determined byB_r,J_r, and the surface divergence ofB–B_pot, respectively, all derived from magnetic data. OurB_Tis identical to the one in the alternative Gaussian decomposition by P. W. Schuck et al., whileB_potand ${\mathit{B}}_{\tilde{S}}$are different from their poloidal fields ${\mathit{B}}_{\mathrm{P}}^{<}$and ${\mathit{B}}_{\mathrm{P}}^{>}$, which arepotentialin the infinitesimal proximity to the upper and lower side of the surface, respectively. In contrast, our ${\mathit{B}}_{\tilde{S}}$has no such constraints and, asB_potandB_T, refers to thesameupper side of the surface. In spite of these differences, for a continuousJdistribution across the surface,B_potand ${\mathit{B}}_{\tilde{S}}$are linear combinations of ${\mathit{B}}_{\mathrm{P}}^{<}$and ${\mathit{B}}_{\mathrm{P}}^{>}$. We demonstrate that, similar to the Gaussian method, our decomposition allows one to identify the footprints and projected surface-location of MFRs in the solar corona, as well as the direction and connectivity of their currents. 

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4. Spin stiffness and spin excitation gap of van der Waals ferromagnetic ${\mathrm{Fe}}_{3+\delta }{\mathrm{GeTe}}_2$

   https://doi.org/10.1088/1361-648X/ad581f  

   Shu, Zhixue; Zhang, Shufeng; Kong, Tai (June 2024, Journal of Physics: Condensed Matter)

   Abstract ${\mathrm{Fe}}_{3+\delta }{\mathrm{GeTe}}_2$(FGT) has proved to be an interesting van der Waals (vdW) ferromagnetic compound with a tunable Curie temperature ( $T_{\mathrm{C}}$). However, the underlying mechanism for varying $T_{\mathrm{C}}$remains elusive. Here, we systematically investigate and compare low-temperature magnetic properties of single crystalline FGT samples that exhibit $T_{\mathrm{C}}$s ranging from 160 K to 205 K. Spin stiffness (D) and spin excitation gap (Δ) are extracted using Bloch’s theory for crystals with varying Fe content. Compared to Cr-based vdW ferromagnets, FGT compounds have higher spin stiffness values but lower spin wave excitation gaps. We discuss the implication of these relationships in Fe–Fe ion magnetic interactions in FGT unit cells. The itinerancy of magnetic electrons is measured and discussed under the Rhodes–Wohlfarth ratio (RWR) and the Takahashi theory. 

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5. Excited-state spin-resonance spectroscopy of V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ defect centers in hexagonal boron nitride

   https://doi.org/10.1038/s41467-022-30772-z  

   Mathur, Nikhil; Mukherjee, Arunabh; Gao, Xingyu; Luo, Jialun; McCullian, Brendan A.; Li, Tongcang; Vamivakas, A. Nick; Fuchs, Gregory D. (June 2022, Nature Communications)

   Abstract The recently discovered spin-active boron vacancy (V$${}_{{{{{{{{\rm{B}}}}}}}}}^{-}$$ ${}_B^{-}$) defect center in hexagonal boron nitride (hBN) has high contrast optically-detected magnetic resonance (ODMR) at room-temperature, with a spin-triplet ground-state that shows promise as a quantum sensor. Here we report temperature-dependent ODMR spectroscopy to probe spin within the orbital excited-state. Our experiments determine the excited-state spin Hamiltonian, including a room-temperature zero-field splitting of 2.1 GHz and a g-factor similar to that of the ground-state. We confirm that the resonance is associated with spin rotation in the excited-state using pulsed ODMR measurements, and we observe Zeeman-mediated level anti-crossings in both the orbital ground- and excited-state. Our observation of a single set of excited-state spin-triplet resonance from 10 to 300 K is suggestive of symmetry-lowering of the defect system fromD_3htoC_2v. Additionally, the excited-state ODMR has strong temperature dependence of both contrast and transverse anisotropy splitting, enabling promising avenues for quantum sensing. 

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