Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning
- PAR ID:
- 10574887
- Publisher / Repository:
- IEEE Transactions on Electron Devices
- Date Published:
- Journal Name:
- IEEE Transactions on Electron Devices
- Volume:
- 71
- Issue:
- 5
- ISSN:
- 0018-9383
- Page Range / eLocation ID:
- 2963 to 2969
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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