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Phase Change Memory (PCM) is an attractive candidate for main memory, as it offers non-volatility and zero leakage power while providing higher cell densities, longer data retention time, and higher capacity scaling compared to DRAM. In PCM, data is stored in the crystalline or amorphous state of the phase change material. The typical electrically controlled PCM (EPCM), however, suffers from longer write latency and higher write energy compared to DRAM and limited multi-level cell (MLC) capacities. These challenges limit the performance of data-intensive applications running on computing systems with EPCMs. Recently, researchers demonstrated optically controlled PCM (OPCM) cells with support for 5bits/cellin contrast to 2bits/cellin EPCM. These OPCM cells can be accessed directly with optical signals that are multiplexed in high-bandwidth-density silicon-photonic links. The higher MLC capacity in OPCM and the direct cell access using optical signals enable an increased read/write throughput and lower energy per access than EPCM. However, due to the direct cell access using optical signals, OPCM systems cannot be designed using conventional memory architecture. We need a complete redesign of the memory architecture that is tailored to the properties of OPCM technology. This article presents the design of a unified network and main memory system called COSMOS that combines OPCM and silicon-photonic links to achieve high memory throughput. COSMOS is composed of a hierarchical multi-banked OPCM array with novel read and write access protocols. COSMOS uses an Electrical-Optical-Electrical (E-O-E) control unit to map standard DRAM read/write commands (sent in electrical domain) from the memory controller on to optical signals that access the OPCM cells. Our evaluation of a 2.5D-integrated system containing a processor and COSMOS demonstrates2.14 ×average speedup across graph and HPC workloads compared to an EPCM system. COSMOS consumes3.8×lower read energy-per-bit and5.97×lower write energy-per-bit compared to EPCM. COSMOS is the first non-volatile memory that provides comparable performance and energy consumption as DDR5 in addition to increased bit density, higher area efficiency, and improved scalability.
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Digitized Phase‐Change Material Heterostack for Transmissive Diffractive Optical Neural Network
All‐optical and fully reconfigurable transmissive diffractive optical neural network (DONN) architectures emerge as high‐throughput and energy‐efficient machine learning (ML) hardware accelerators in broad applications. However, current device and system implementations have limited performance. In this work, a novel transmissive diffractive device architecture, a digitized phase‐change material (PCM) heterostack, which consists of multiple nonvolatile PCM layers with different thicknesses, is demonstrated. Through this architecture, the advantages of PCM electrical and optical properties can be leveraged and challenges associated with multilevel operations in a single PCM layer can be mitigated. Through proof‐of‐concept experiments, the electrical tuning of one PCM layer is demonstrated in a transmissive spatial light modulation device, and thermal analysis guides the design of multilayer devices and DONN systems to avoid thermal cross talk if individual heterostacks are assembled into an array. Further, a heterostack containing three PCM layers is designed based on experimental results to produce a large‐phase modulation range and uniform coverage, and the ML performance of DONN systems with the designed heterostack is evaluated. The developed device architecture is practically feasible and scalable for future energy‐efficient, fast‐reconfigured, and compact transmissive DONN systems.
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- PAR ID:
- 10575413
- Publisher / Repository:
- Wiley
- Date Published:
- Journal Name:
- Advanced Photonics Research
- ISSN:
- 2699-9293
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement of a variety of applications from data communication and computing devices to environmental science and space explorations. Chalcogenide‐based phase‐change materials (PCMs) are one of the most promising material candidates for reconfigurable photonics due to their large optical contrast between their different solid‐state structural phases. Although significant efforts have been devoted to accurate simulation of PCM‐based devices, in this paper, three important aspects which have often evaded prior models yet having significant impacts on the thermal and phase transition behavior of these devices are highlighted: the enthalpy of fusion, the heat capacity change upon glass transition, as well as the thermal conductivity of liquid‐phase PCMs. The important topic of switching energy scaling in PCM devices, which also helps explain why the three above‐mentioned effects have long been overlooked in electronic PCM memories but only become important in photonics, is further investigated. These findings offer insight to facilitate accurate modeling of PCM‐based photonic devices and can inform the development of more efficient reconfigurable optics.more » « less
- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1002/adpr.202400201
