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Abstract Photodetectors operating across the near‐ to short‐wave infrared (NIR–SWIR,λ= 0.9–1.8 µm) underpin modern science, technology, and society. Organic photodiodes (OPDs) based on bulk‐heterojunction (BHJ) active layers overcome critical manufacturing and operating drawbacks inherent to crystalline inorganic semiconductors, offering the potential for low‐cost, uncooled, mechanically compliant, and ubiquitous infrared technologies. A constraining feature of these narrow bandgap materials systems is the high noise current under an applied bias, resulting in specific detectivities (D*, the figure of merit for detector sensitivity) that are too low for practical utilization. Here, this study demonstrates that incorporating wide‐bandgap insulating polymers within the BHJ suppresses noise by diluting the transport and trapping sites as determined using capacitance‐frequency analysis. The resultingD*of NIR–SWIR OPDs operating from 600–1400 nm under an applied bias of −2 V is improved by two orders of magnitude, from 108to 1010 Jones (cm Hz1/2 W−1), when incorporating polysulfone within the blends. This broadly applicable strategy can reduce noise in IR‐OPDs enabling their practical operation and the realization of emerging technologies.
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Broadband infrared photodetection using a narrow bandgap conjugated polymer
Photodetection spanning the short-, mid-, and long-wave infrared (SWIR-LWIR) underpins modern science and technology. Devices using state-of-the-art narrow bandgap semiconductors require complex manufacturing, high costs, and cooling requirements that remain prohibitive for many applications. We report high-performance infrared photodetection from a donor-acceptor conjugated polymer with broadband SWIR-LWIR operation. Electronic correlations within the π-conjugated backbone promote a high-spin ground state, narrow bandgap, long-wavelength absorption, and intrinsic electrical conductivity. These previously unobserved attributes enabled the fabrication of a thin-film photoconductive detector from solution, which demonstrates specific detectivities greater than 2.10 × 10 9 Jones. These room temperature detectivities closely approach those of cooled epitaxial devices. This work provides a fundamentally new platform for broadly applicable, low-cost, ambient temperature infrared optoelectronics.
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- Award ID(s):
- 1757220
- PAR ID:
- 10335944
- Date Published:
- Journal Name:
- Science Advances
- Volume:
- 7
- Issue:
- 24
- ISSN:
- 2375-2548
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.1126/sciadv.abg2418
