We report the first evidence for the transition with a significance of 3.5 standard deviations. The decay branching fraction is measured to be , which is noticeably smaller than expected. We also set upper limits on transitions of , and , at the 90% confidence level. These results are obtained with a data sample collected near the resonance with the Belle detector at the KEKB asymmetric-energy collider. Published by the American Physical Society2024
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This content will become publicly available on January 1, 2026
Low leakage current in heteroepitaxial Al0.7Sc0.3N ferroelectric films on GaN
Wurtzite ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as and . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial films on with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A ) than previously reported films (1–19 A ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported films. To support this conclusion, we show that on lattice-matched buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society2025
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- Award ID(s):
- 2119281
- PAR ID:
- 10583614
- Publisher / Repository:
- American Physical Society
- Date Published:
- Journal Name:
- Physical Review Applied
- Volume:
- 23
- Issue:
- 1
- ISSN:
- 2331-7019
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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