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Title: Electronic structure orientation as a map of in-plane antiferroelectricity in β′-In 2 Se 3
Antiferroelectric (AFE) materials are excellent candidates for sensors, capacitors, and data storage due to their electrical switchability and high-energy storage capacity. However, imaging the nanoscale landscape of AFE domains is notoriously inaccessible, which has hindered development and intentional tuning of AFE materials. Here, we demonstrate that polarization-dependent photoemission electron microscopy can resolve the arrangement and orientation of in-plane AFE domains on the nanoscale, despite the absence of a net lattice polarization. Through direct determination of electronic transition orientations and analysis of domain boundary constraints, we establish that antiferroelectricity in β′-In2Se3is a robust property from the scale of tens of nanometers to tens of micrometers. Ultimately, the method for imaging AFE domain organization presented here opens the door to investigations of the influence of domain formation and orientation on charge transport and dynamics.  more » « less
Award ID(s):
2011854
PAR ID:
10590256
Author(s) / Creator(s):
; ; ; ; ;
Publisher / Repository:
American Association for the Advancement of Science
Date Published:
Journal Name:
Science Advances
Volume:
10
Issue:
24
ISSN:
2375-2548
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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